Single Gate P-N Junctions in Graphene-Ferroelectric Devices

Abstract

Graphene's linear dispersion relation and the attendant implications for bipolar electronics applications have motivated a range of experimental efforts aimed at producing p-n junctions in graphene. Here we report electrical transport measurements of graphene p-n junctions formed via simple modifications to a PbZr${}_{0.2}$Ti${}_{0.8}$O${}_3$ substrate, combined with a self-assembled layer of ambient environmental dopants. We show that the substrate configuration controls the local doping region, and that the p-n junction behavior can be controlled with a single gate. Finally, we show that the ferroelectric substrate induces a hysteresis in the environmental doping which can be utilized to activate and deactivate the doping, yielding an `on-demand' p-n junction in graphene controlled by a single, universal backgate.

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Cited by in corpus (7)

• Defect driven flexo-chemical coupling in thin ferroelectric films
• P-N junctions dynamics in graphene channel induced by ferroelectric domains motion
• Graphene Transport Mediated by Micropatterned Substrates
• Limits for the graphene on ferroelectric domain wall p-n-junction rectifier for different regimes of current
• Impact of the domain structure in ferroelectric substrate on graphene conductance (authors' review)
• Integer Quantum Hall Effect in Graphene Channel with p-n Junction at Domain Wall in Ferroelectric Substrate
• Nontrivial magnetic field related phenomena in the single-layer graphene on ferroelectric substrate