Semimetalic graphene in a modulated electric potential
arXiv:0809.1514 · doi:10.1103/PhysRevB.79.115427
Abstract
The -electronic structure of graphene in the presence of a modulated electric potential is investigated by the tight-binding model. The low-energy electronic properties are strongly affected by the period and field strength. Such a field could modify the energy dispersions, destroy state degeneracy, and induce band-edge states. It should be noted that a modulated electric potential could make semiconducting graphene semimetallic, and that the onset period of such a transition relies on the field strength. There exist infinite Fermi-momentum states in sharply contrast with two crossing points (Dirac points) for graphene without external fields. The finite density of states (DOS) at the Fermi level means that there are free carriers, and, at the same time, the low DOS spectrum exhibits many prominent peaks, mainly owing to the band-edge states.
12pages, 5 figures
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- Tunable Superlattice in Graphene To Control the Number of Dirac Points
- Single-layer and bilayer graphene superlattices: collimation, additional Dirac points and Dirac lines
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- Graphene superlattice with periodically modulated Dirac gap
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- Designer gapped and tilted Dirac cones in lateral graphene superlattices