A scalable network model for electrically tunable ferroelectric domain structure in twistronic bilayers of two-dimensional semiconductors

Abstract

Moiré structures in small-angle-twisted bilayers of two-dimensional semiconductors with a broken-symmetry interface form arrays of ferroelectric domains with periodically alternating out-of-plane polarization. Here, we propose a network theory for the tunability of such FE domain structure by applying an electric field perpendicular to the 2D crystal. Using multiscale analysis, we derive a fully parametrized string-theory-like description of the domain wall network and show that it undergoes a qualitative change, after the arcs of partial dislocation like domain walls merge (near the network nodes) into streaks of perfect screw dislocations, which happens at a threshold displacement field dependent on the DWN period.

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Cited by in corpus (12)

• Atypical sliding and Moire ferroelectricity in pure multilayer graphene
• Theory of polar domains in moiré heterostructures
• Excitonic signatures of ferroelectric order in parallel-stacked MoS${}_2$
• Flat and tunable moire phonons in twisted transition-metal dichalcogenides
• Scaleability of dielectric susceptibility ${\epsilon }_{zz}$ with the number of layers and additivity of ferroelectric polarization in van der Waals semiconductors
• Ferroelectricity in twisted double bilayer graphene
• Dislocations in twistronic heterostructures
• Moiré Band Engineering in Twisted Trilayer WSe2
• Moiré Modulation of Charge Density Waves
• Ferroelectric Properties of van der Waals Chalcogenides: DFT perspective
• Quasi-bound layer-breathing phonons inside perfect dislocations of lattice-relaxed twisted bilayers
• Large symmetry and hierarchical ordering transitions in sliding ferroelectrics