60 citations · 123 across the 3 of their papers we have counts for
8 papers
Ferroelectric switching at symmetry-broken interfaces by local control of dislocation networks
Laurent Molino, Leena Aggarwal, Vladimir Enaldiev +3
Semiconducting ferroelectric materials with low energy polarisation switching offer a platform for next-generation electronics such as ferroelectric field-effect transistors. Ferro…
Multifaceted moiré superlattice physics in twisted WSe bilayers
S. J. Magorrian, V. V. Enaldiev, V. Zólyomi +3
Lattice reconstruction in twisted transition-metal dichalcogenide (TMD) bilayers gives rise to piezo- and ferroelectric moiré potentials for electrons and holes, as well as a modul…
Full Slonczewski-Weiss-McClure parametrization of few-layer twistronic graphene
Aitor Garcia-Ruiz, Haiyao Deng, Vladimir V. Enaldiev +1
We use a hybrid k dot p theory - tight binding (HkpTB) model to describe interlayer coupling simultaneously in both Bernal and twisted graphene structures. For Bernal-aligned inter…
Band energy landscapes in twisted homobilayers of transition metal dichalcogenides
Fábio Ferreira, Samuel Magorrian, Vladimir Enaldiev +2
Twistronic assembly of 2D materials employs the twist angle between adjacent layers as a tuning parameter for designing the electronic and optical properties of van der Waals heter…
Weak ferroelectric charge transfer in layer-asymmetric bilayers of 2D semiconductors
F. Ferreira, V. V. Enaldiev, V. I. Fal'ko +1
In bilayers of two-dimensional (2D) semiconductors with stacking arrangements which lack inversion symmetry charge transfer between the layers due to layer-asymmetric interband hyb…
Piezoelectric networks and ferroelectric moiré superlattice domains in twistronic WS/MoS and WSe/MoSe bilayers
V. V. Enaldiev, F. Ferreira, S. J. Magorrian +1
Twistronic van der Waals heterostrutures offer exciting opportunities for engineering optoelectronic properties of nanomaterials. Here, we use multiscale modeling to study trapping…