Full Slonczewski-Weiss-McClure parametrization of few-layer twistronic graphene

Abstract

We use a hybrid k dot p theory - tight binding (HkpTB) model to describe interlayer coupling simultaneously in both Bernal and twisted graphene structures. For Bernal-aligned interfaces, HkpTB is parametrized using the full Slonczewski-Weiss-McClure (SWMcC) Hamiltonian of graphite, which is then used to refine the commonly used minimal model for twisted interfaces, by deriving additional terms that reflect all details of the full SWMcC model of graphite. We find that these terms introduce some electron-hole asymmetry in the band structure of twisted bilayers, but in twistronic multilayer graphene, they produce only a subtle change of moire miniband spectra, confirming the broad applicability of the minimal model for implementing the twisted interface coupling in such systems.

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Cited by in corpus (13)

• Mixed-Stacking Few-Layer Graphene as an Elemental Weak Ferroelectric Material
• Analytical Model for Atomic Relaxation in Twisted Moiré Materials
• Scattering between minivalleys in a moiré material
• Spectroscopic signatures of tetralayer graphene polytypes
• ARPES signatures of few-layer twistronic graphenes
• Non-chiral one-dimensional states propagating inside AB/BA domain walls in bilayer graphene
• Moiré fractals in twisted graphene layers
• Kagomé quantum oscillations in graphene superlattices
• Semimetallic and semiconducting graphene-hBN multilayers with parallel or reverse stacking
• Review of the tight-binding method applicable to the properties of moiré superlattices
• Long wavelength interdomain phonons and instability of dislocations in small-angle twisted bilayers
• Quasi-bound layer-breathing phonons inside perfect dislocations of lattice-relaxed twisted bilayers
• Electronic Structure of Multilayer Graphene with Arbitrary Stackings