Full Slonczewski-Weiss-McClure parametrization of few-layer twistronic graphene

Abstract

We use a hybrid k dot p theory - tight binding (HkpTB) model to describe interlayer coupling simultaneously in both Bernal and twisted graphene structures. For Bernal-aligned interfaces, HkpTB is parametrized using the full Slonczewski-Weiss-McClure (SWMcC) Hamiltonian of graphite, which is then used to refine the commonly used minimal model for twisted interfaces, by deriving additional terms that reflect all details of the full SWMcC model of graphite. We find that these terms introduce some electron-hole asymmetry in the band structure of twisted bilayers, but in twistronic multilayer graphene, they produce only a subtle change of moire miniband spectra, confirming the broad applicability of the minimal model for implementing the twisted interface coupling in such systems.

References in corpus (13)

• The electronic properties of bilayer graphene
• Flat Bands in Slightly Twisted Bilayer Graphene
• Tunable Phase Boundaries and Ultra-Strong Coupling Superconductivity in Mirror Symmetric Magic-Angle Trilayer Graphene
• Continuum Model of the Twisted Bilayer
• Lattice relaxation and energy band modulation in twisted bilayer graphenes
• Electric field tunable unconventional superconductivity in alternating twist magic-angle trilayer graphene
• Numerical studies of confined states in rotated bilayers of graphene
• Determination of the electronic structure of bilayer graphene from infrared spectroscopy results
• Quantum Hall effect and Landau level crossing of Dirac fermions in trilayer graphene
• The crucial role of atomic corrugation on the flat bands and energy gaps of twisted bilayer graphene at the "magic angle" $\theta \sim 1.08^{\circ }$
• Interlayer interaction in general incommensurate atomic layers
• Dimensional reduction, quantum Hall effect and layer parity in graphite films
• Pressure induced gap modulation and topological transitions in twisted bilayer and double bilayer graphene

Cited by in corpus (13)

• Mixed-Stacking Few-Layer Graphene as an Elemental Weak Ferroelectric Material
• Analytical Model for Atomic Relaxation in Twisted Moiré Materials
• Scattering between minivalleys in a moiré material
• Spectroscopic signatures of tetralayer graphene polytypes
• ARPES signatures of few-layer twistronic graphenes
• Non-chiral one-dimensional states propagating inside AB/BA domain walls in bilayer graphene
• Moiré fractals in twisted graphene layers
• Kagomé quantum oscillations in graphene superlattices
• Semimetallic and semiconducting graphene-hBN multilayers with parallel or reverse stacking
• Review of the tight-binding method applicable to the properties of moiré superlattices
• Long wavelength interdomain phonons and instability of dislocations in small-angle twisted bilayers
• Quasi-bound layer-breathing phonons inside perfect dislocations of lattice-relaxed twisted bilayers
• Electronic Structure of Multilayer Graphene with Arbitrary Stackings