activity
20192026
most citedAtomic reconstruction in twisted bilayers of transition metal dichalcogenides

458 citations · 1.7k across the 22 of their papers we have counts for

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Showing 2021Show all

6 papers · 1 filter

cond-mat.mes-hall2021★ 42 cited

A scalable network model for electrically tunable ferroelectric domain structure in twistronic bilayers of two-dimensional semiconductors

V. V. Enaldiev, F. Ferreira, V. I. Fal'ko

Moiré structures in small-angle-twisted bilayers of two-dimensional semiconductors with a broken-symmetry interface form arrays of ferroelectric domains with periodically alternati…

cond-mat.mes-hall2021★ 372 cited

Interfacial ferroelectricity in marginally twisted 2D semiconductors

Astrid Weston, Eli G Castanon, Vladimir Enaldiev +19

Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of novel metamaterials. Here we demonstrate a room-temperature ferroelectric semico…

cond-mat.mes-hall2021★ 60 cited

Multifaceted moiré superlattice physics in twisted WSe bilayers

S. J. Magorrian, V. V. Enaldiev, V. Zólyomi +3

Lattice reconstruction in twisted transition-metal dichalcogenide (TMD) bilayers gives rise to piezo- and ferroelectric moiré potentials for electrons and holes, as well as a modul…

cond-mat.mes-hall2021★ 20 cited

Full Slonczewski-Weiss-McClure parametrization of few-layer twistronic graphene

Aitor Garcia-Ruiz, Haiyao Deng, Vladimir V. Enaldiev +1

We use a hybrid k dot p theory - tight binding (HkpTB) model to describe interlayer coupling simultaneously in both Bernal and twisted graphene structures. For Bernal-aligned inter…

cond-mat.mes-hall2021★ 34 cited

Band energy landscapes in twisted homobilayers of transition metal dichalcogenides

Fábio Ferreira, Samuel Magorrian, Vladimir Enaldiev +2

Twistronic assembly of 2D materials employs the twist angle between adjacent layers as a tuning parameter for designing the electronic and optical properties of van der Waals heter…

cond-mat.mes-hall2021★ 50 cited

Weak ferroelectric charge transfer in layer-asymmetric bilayers of 2D semiconductors

F. Ferreira, V. V. Enaldiev, V. I. Fal'ko +1

In bilayers of two-dimensional (2D) semiconductors with stacking arrangements which lack inversion symmetry charge transfer between the layers due to layer-asymmetric interband hyb…