Designing topology and fractionalization in narrow gap semiconductor films via electrostatic engineering

Abstract

We show that topological flat minibands can be engineered in a class of narrow gap semiconductor films using only an external electrostatic superlattice potential. We demonstrate that, for realistic material parameters, these bands are capable of hosting correlated topological phases such as integer and fractional quantum anomalous Hall states and composite Fermi liquid phases at zero magnetic field. Our results provide a path towards the realization of fractionalized topological states in a broad range of materials.

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Cited by in corpus (10)

• Band structure engineering using a moiré polar substrate
• Variational Mapping of Chern Bands to Landau Levels: Application to Fractional Chern Insulators in Twisted MoTe${}_2$
• Efficient prediction of superlattice and anomalous miniband topology from quantum geometry
• Artificial moiré engineering for an ideal BHZ model
• Self-consistent tensor network method for correlated super-moiré matter beyond one billion sites
• Engineering topological exciton structures in two-dimensional semiconductors by a periodic electrostatic potential
• Giant Shift Current in Electrically-Tunable Superlattice Bilayer Graphene
• Designing Flat Bands and Pseudo-Landau Levels in GaAs with Patterned Gates
• Magnetic Bloch bands and Weiss oscillations in Dirac mass superlattices
• Manipulating Charge Distribution in Moiré Superlattices by Light