Designing topology and fractionalization in narrow gap semiconductor films via electrostatic engineering

Abstract

We show that topological flat minibands can be engineered in a class of narrow gap semiconductor films using only an external electrostatic superlattice potential. We demonstrate that, for realistic material parameters, these bands are capable of hosting correlated topological phases such as integer and fractional quantum anomalous Hall states and composite Fermi liquid phases at zero magnetic field. Our results provide a path towards the realization of fractionalized topological states in a broad range of materials.

References in corpus (46)

• Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
• Topological Insulators with Inversion Symmetry
• High temperature fractional quantum Hall states
• Fractional quantum Hall states at zero magnetic field
• Nearly-flat bands with nontrivial topology
• Stacking-engineered ferroelectricity in bilayer boron nitride
• Flat Bands in Slightly Twisted Bilayer Graphene
• Signatures of Fractional Quantum Anomalous Hall States in Twisted MoTe2 Bilayer
• Observation of Fractionally Quantized Anomalous Hall Effect
• Fractional quantum Hall effect in the absence of Landau levels
• Quantum Spin Hall Effect and Enhanced Magnetic Response by Spin-Orbit Coupling
• Interfacial ferroelectricity in rhombohedral-stacked bilayer transition metal dichalcogenides
• Integer and fractional Chern insulators in twisted bilayer MoTe2
• Bulk Topological Invariants in Noninteracting Point Group Symmetric Insulators
• Observation of integer and fractional quantum anomalous Hall effects in twisted bilayer MoTe2
• Charge-polarized interfacial superlattices in marginally twisted hexagonal boron nitride
• Exact Landau Level Description of Geometry and Interaction in a Flatband
• Spontaneous fractional Chern insulators in transition metal dichalcogenides Moire superlattices
• Fractional quantum anomalous Hall states in twisted bilayer MoTe${}_2$ and WSe${}_2$
• Anomalous Hall metal and fractional Chern insulator in twisted transition metal dichalcogenides
• Position-Momentum Duality and Fractional Quantum Hall Effect in Chern Insulators
• Vortexability: A Unifying Criterion for Ideal Fractional Chern Insulators
• Composite Fermi Liquid at Zero Magnetic Field in Twisted MoTe${}_2$
• Interplay of Fractional Chern Insulator and Charge-Density-Wave Phases in Twisted Bilayer Graphene
• Magic Angles and Fractional Chern Insulators in Twisted Homobilayer TMDs
• Zero-field composite Fermi liquid in twisted semiconductor bilayers
• Topological and stacked flat bands in bilayer graphene with a superlattice potential
• Magic-angle helical trilayer graphene
• Creation of moiré bands in a monolayer semiconductor by spatially periodic dielectric screening
• Pressure--enhanced fractional Chern insulators in moiré transition metal dichalcogenides along a magic line
• Universal superlattice potential for 2D materials from twisted interface inside h-BN substrate
• Quantum Hall phase in graphene engineered by interfacial charge coupling
• A moiré superlattice on the surface of a topological insulator
• Engineering high quality graphene superlattices via ion milled ultra-thin etching masks
• Two-dimensional topological insulator state in cadmium arsenide thin films
• Electrically Tunable Quantum Spin Hall State in Topological Crystalline Insulator Thin films
• Chiral limit and origin of topological flat bands in twisted transition metal dichalcogenide homobilayers
• Massive Dirac fermions in moiré superlattices: a route towards topological flat minibands
• Exceptional electronic transport and quantum oscillations in thin bismuth crystals grown inside van der Waals materials
• Multilayer graphene with a superlattice potential
• Gate-tunable topological phases in superlattice modulated bilayer graphene
• First principles theory of Dirac semimetal Cd${}_3$As${}_2$ under Zeeman magnetic field
• Trial wave functions for a Composite Fermi liquid on a torus
• Engineering the in-plane anomalous Hall effect in Cd${}_3$As${}_2$ thin films
• Synergistic correlated states and nontrivial topology in coupled graphene-insulator heterostructures
• ${\mathbb{Z}}_2$-Nontrivial Moiré Minibands and Interaction-Driven Quantum Anomalous Hall Insulators in Topological Insulator Based Moiré Heterostructures

Cited by in corpus (10)

• Band structure engineering using a moiré polar substrate
• Variational Mapping of Chern Bands to Landau Levels: Application to Fractional Chern Insulators in Twisted MoTe${}_2$
• Efficient prediction of superlattice and anomalous miniband topology from quantum geometry
• Artificial moiré engineering for an ideal BHZ model
• Self-consistent tensor network method for correlated super-moiré matter beyond one billion sites
• Engineering topological exciton structures in two-dimensional semiconductors by a periodic electrostatic potential
• Giant Shift Current in Electrically-Tunable Superlattice Bilayer Graphene
• Designing Flat Bands and Pseudo-Landau Levels in GaAs with Patterned Gates
• Magnetic Bloch bands and Weiss oscillations in Dirac mass superlattices
• Manipulating Charge Distribution in Moiré Superlattices by Light