Band structure engineering using a moiré polar substrate
arXiv:2405.03761 · doi:10.1038/s41467-024-55432-2
Abstract
Applying long wavelength periodic potentials on quantum materials has recently been demonstrated to be a promising pathway for engineering novel quantum phases of matter. Here, we utilize twisted bilayer boron nitride (BN) as a moiré substrate for band structure engineering. Small-angle-twisted bilayer BN is endowed with periodically arranged up and down polar domains, which imprints a periodic electrostatic potential on a target two-dimensional (2D) material placed on top. As a proof of concept, we use Bernal bilayer graphene as the target material. The resulting modulation of the band structure appears as superlattice resistance peaks, tunable by varying the twist angle, and Hofstadter butterfly physics under a magnetic field. Additionally, we demonstrate the tunability of the moiré potential by altering the dielectric thickness underneath the twisted BN. Finally, we find that near-60°-twisted bilayer BN provides a unique platform for studying the moiré structural effect without the contribution from electrostatic moiré potentials. Tunable moiré polar substrates may serve as versatile platforms to engineer the electronic, optical, and mechanical properties of 2D materials and van der Waals heterostructures.
arXiv comment21 pages, 11 figures
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- Confined Trions and Mott-Wigner States in a Purely Electrostatic Moiré Potential
- Displacement field-controlled fractional Chern insulators and charge density waves in a graphene/hBN moiré superlattice
- Magnetic Bloch States at Integer Flux Quanta Induced by Super-moiré Potential in Graphene Aligned with Twisted Boron Nitride
- Giant Shift Current in Electrically-Tunable Superlattice Bilayer Graphene
- Two-dimensional moiré phonon polaritons
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- Electronic phonon-induced magnetism in moiré Mott-Wigner crystals
- Chern junctions in Moiré-Patterned Graphene/PbI2
- Manipulating Charge Distribution in Moiré Superlattices by Light