Relationship between conductance fluctuation and weak localization in graphene
arXiv:1703.07046 · doi:10.1103/PhysRevB.95.125427
Abstract
The relationship between the universal conductance fluctuation and the weak localization effect in monolayer graphene is investigated. By comparing experimental results with the predictions of the weak localization theory for graphene, we find that the ratio of the elastic intervalley scattering time to the inelastic dephasing time varies in accordance with the conductance fluctuation; this is a clear evidence connecting the universal conductance fluctuation with the weak localization effect. We also find a series of scattering lengths that are related to the phase shifts caused by magnetic flux by Fourier analysis.
References in corpus (39)
- Electric Field Effect in Atomically Thin Carbon Films
- Two-Dimensional Gas of Massless Dirac Fermions in Graphene
- Topological Insulators
- The Raman Fingerprint of Graphene
- Topological insulators and superconductors
- Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
- Two Dimensional Atomic Crystals
- Van der Waals heterostructures
- Observation of Electron-Hole Puddles in Graphene Using a Scanning Single Electron Transistor
- Atomic Structure of Graphene on SiO2
- Spin-orbit coupling in curved graphene, fullerenes, nanotubes, and nanotube caps
- Weak localisation magnetoresistance and valley symmetry in graphene
- Strong suppression of weak (anti)localization in graphene
- Acoustic phonon scattering limited carrier mobility in 2D extrinsic graphene
- Electronic transport in graphene: A semi-classical approach including midgap states
- Weak localisation in graphene flakes
- Intervalley scattering, long-range disorder, and effective time reversal symmetry breaking in graphene
- Evidence of the role of contacts on the observed electron-hole asymmetry in graphene
- Crossover between weak localization and weak antilocalization in magnetically doped topological insulator
- On resonant scatterers as a factor limiting carrier mobility in graphene
- Origin of New Broad Raman D and G Peaks in Annealed Graphene
- Anomalously large conductance fluctuations in weakly disordered graphene
- Magneto-transport in Disordered Graphene: from Weak Localization to Strong Localization
- Magnetic field-tuned Aharonov-Bohm oscillations and evidence for non-Abelian anyons at v=5/2
- Aharonov-Bohm interferences from local deformations in graphene
- Evidence for spin-flip scattering and local moments in dilute fluorinated graphene
- Defect-mediated spin relaxation and dephasing in graphene
- Manifestation of electron-electron interaction in the magnetoresistance of graphene
- Quantum kinetic equation and universal conductance fluctuations in graphene
- Weak localization scattering lengths in epitaxial, and CVD graphene
- Magnetoresistance in Single Layer Graphene: Weak Localization and Universal Conductance Fluctuation Studies
- Interplay between interferences and electron-electron interactions in epitaxial graphene
- Mesoscopic conductance fluctuations in graphene
- Conductance fluctuations and field asymmetry of rectification in graphene
- Imaging coherent transport in graphene (Part II): Probing weak localization
- Phase Coherent Transport in Graphene Nanoribbons and Graphene Nanoribbon Arrays
- Non-Ergodicity & Microscopic Symmetry Breaking of the Conductance Fluctuations in Disordered Mesoscopic Graphene
- Weak Localization in Few-Layer Black Phosphorus
- Tuning of quantum interference in top-gated graphene on SiC
Cited by in corpus (4)
- Conductance Peak Density in Nanowires
- Temperature dependence of universal conductance fluctuation due to development of weak localization in graphene
- Disorder correction to the minimal conductance of a nodal-point semimetal
- Weak localization and universal conductance fluctuations in large area twisted bilayer graphene