On resonant scatterers as a factor limiting carrier mobility in graphene
arXiv:1003.0202 · doi:10.1021/nl101399r
Abstract
We show that graphene deposited on a substrate has a non-negligible density of atomic scale defects. This is evidenced by a previously unnoticed D peak in the Raman spectra with intensity of about 1% with respect to the G peak. We evaluated the effect of such impurities on electron transport by mimicking them with hydrogen adsorbates and measuring the induced changes in both mobility and Raman intensity. If the intervalley scatterers responsible for the D peak are monovalent, their concentration is sufficient to account for the limited mobilities achievable in graphene on a substrate.
version 2: several comments are taken into account and refs added
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- Variability Effects in Graphene: Challenges and Opportunities for Device Engineering and Applications
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- High-field magnetoresistance revealing scattering mechanisms in graphene