Interplay of resonant states and Landau levels in functionalized graphene
arXiv:1812.07299 · doi:10.1103/PhysRevB.99.035412
Abstract
Adsorbates can drastically alter physical properties of graphene. Particularly important are adatoms and admolecules that induce resonances at the Dirac point. Such resonances limit electron mobilities and spin relaxation times. We present a systematic tight-binding as well as analytical modeling to investigate the properties of resonant states in the presence of a quantizing magnetic field. Landau levels are strongly influenced by the resonances, especially close to the Dirac point. Here the cyclotron motion of electrons around a defect leads to the formation of circulating local currents which are manifested by the appearance of side peaks around the zero-energy Landau level. Our study is based on realistic parameters for H, F, and Cu adatoms, each exhibiting distinct spectral features in the magnetic field. We also show that by observing a local density of states around an adatom in the presence of Landau levels useful microscopic model parameters can be extracted.
arXiv comment8 pages, 5 figures
References in corpus (37)
- The electronic properties of graphene
- Electronic transport in two dimensional graphene
- Graphene Spintronics
- Magnetism in Graphene Induced by Single-Atom Defects
- Electronic Properties of Disordered Two-Dimensional Carbon
- The Kernel Polynomial Method
- Colloquium: The transport properties of graphene: An introduction
- Atomic-scale control of graphene magnetism using hydrogen atoms
- Impurity induced spin-orbit coupling in graphene
- Resonant scattering by realistic impurities in graphene
- Magnetic Moment Formation in Graphene Detected by Scattering of Pure Spin Currents
- On resonant scatterers as a factor limiting carrier mobility in graphene
- Electronic properties of graphene: a perspective from scanning tunneling microscopy and magneto-transport
- Observing Atomic Collapse Resonances in Artificial Nuclei on Graphene
- Nanoscale thermal imaging of dissipation in quantum systems
- Spin relaxation mechanism in graphene: resonant scattering by magnetic impurities
- Spin-orbit coupling in hydrogenated graphene
- Model spin-orbit coupling Hamiltonians for graphene systems
- Colossal negative magnetoresistance in dilute fluorinated graphene
- Realization of a Tunable Artificial Atom at a Supercritically Charged Vacancy in Graphene
- Electronic structure of the substitutional vacancy in graphene: Density-functional and Green's function studies
- A road to hydrogenating graphene by a reactive ion etching plasma
- Imaging resonant dissipation from individual atomic defects in graphene
- Screening Charged Impurities and Lifting the Orbital Degeneracy in Graphene by Populating Landau Levels
- Enhanced spin-orbit coupling in hydrogenated and fluorinated graphenes studied from first principles
- Spin-orbit coupling in fluorinated graphene
- Scattering theory of spin-orbit active adatoms on graphene
- Electrical conductivity in graphene with point defects
- Copper adatoms on graphene: theory of orbital and spin-orbital effects
- Resonant scattering due to adatoms in graphene: top, bridge, and hollow position
- Spin-orbit coupling in methyl functionalized graphene
- Theory of spin-orbit induced spin relaxation in functionalized graphene
- Electrically tunable resonant scattering in fluorinated bilayer graphene
- Quantum transport in graphene Hall bars: Effects of vacancy disorder
- Transport Spectroscopy of Sublattice-Resolved Resonant Scattering in Hydrogen-Doped Bilayer Graphene
- Green functions of electrons in monolayer and bilayer graphene in a magnetic field
- Functionalized Graphene in Quantizing Magnetic Field: The case of bunched impurities