Electrically tunable resonant scattering in fluorinated bilayer graphene

Abstract

Adatom-decorated graphene offers a promising new path towards spintronics in the ultrathin limit. We combine experiment and theory to investigate the electronic properties of dilutely fluorinated bilayer graphene, where the fluorine adatoms covalently bond to the top graphene layer. We show that fluorine adatoms give rise to resonant impurity states near the charge neutrality point of the bilayer, leading to strong scattering of charge carriers and hopping conduction inside a field-induced band gap. Remarkably, the application of an electric field across the layers is shown to tune the resonant scattering amplitude from fluorine adatoms by nearly twofold. The experimental observations are well explained by a theoretical analysis combining Boltzmann transport equations and fully quantum-mechanical methods. This paradigm can be generalized to many bilayer graphene-adatom materials, and we envision that the realization of electrically tunable resonance may be a key advantage in graphene-based spintronic devices.

arXiv commentpdflatex, 18 pages including supplementary materials, 4 figures in the main text, 5 figures in the supplementary material

References in corpus (35)

• Control of graphene's properties by reversible hydrogenation
• Fluorographene: Two Dimensional Counterpart of Teflon
• Asymmetry gap in the electronic band structure of bilayer graphene
• Emergence of magnetism in graphene materials and nanostructures
• The Kernel Polynomial Method
• Spin-half paramagnetism in graphene induced by point defects
• Defect scattering in graphene
• Observation of an Electric-Field Induced Band Gap in Bilayer Graphene by Infrared Spectroscopy
• Disorder Induced Localized States in Graphene
• Ab Initio Theory of Gate Induced Gaps in Graphene Bilayers
• Electronic transport in graphene: A semi-classical approach including midgap states
• First-principles investigation of graphene fluoride and graphane
• Modeling disorder in graphene
• Reversible Fluorination of Graphene: towards a Two-Dimensional Wide Bandgap Semiconductor
• Tunable Kondo Effect in Graphene with Defects
• Magnetic Moment Formation in Graphene Detected by Scattering of Pure Spin Currents
• On resonant scatterers as a factor limiting carrier mobility in graphene
• Extrinsic Spin Hall Effect Induced by Iridium Impurities in Copper
• Spin relaxation mechanism in graphene: resonant scattering by magnetic impurities
• Unified description of the dc conductivity of monolayer and bilayer graphene at finite densities based on resonant scatterers
• Colossal negative magnetoresistance in dilute fluorinated graphene
• Spin Hall Effect induced by resonant scattering on impurities in metals
• Electronic properties of a biased graphene bilayer
• Aryl Functionalization as a Route to Band Gap Engineering in Single Layer Graphene Devices
• A theoretical analysis of the chemical bonding and electronic structure of graphene interacting with Group IA and Group VIIA elements
• Transport studies of dual-gated ABC and ABA trilayer graphene: band gap opening and band structure tuning in very large perpendicular electric field
• Evidence for spin-flip scattering and local moments in dilute fluorinated graphene
• Extrinsic spin Hall effect induced by resonant skew scattering in graphene
• Critical delocalization of chiral zero energy modes in graphene
• Transport in gapped bilayer graphene: the role of potential fluctuations
• Electronic Transport in Disordered Bilayer and Trilayer Graphene
• A new type of vacancy-induced localized states in multilayer graphene
• Density of states in graphene with vacancies: midgap power law and frozen multifractality
• Photoluminescence from nanocrystalline graphite monofluoride
• Density of states in a two-dimensional chiral metal with vacancies

Cited by in corpus (14)

• Gate-controlled topological conducting channels in bilayer graphene
• Microscopic Theory of Spin Relaxation Anisotropy in Graphene with Proximity-Induced Spin-Orbit Coupling
• Nonlinear photocurrents in two-dimensional systems based on graphene and boron nitride
• Quantum Diagrammatic Theory of the Extrinsic Spin Hall Effect in Graphene
• Lévy flights due to anisotropic disorder in graphene
• Current density and conductivity through modified gravity in the graphene with defects
• Crossover to the Anomalous Quantum Regime in the Extrinsic Spin Hall Effect of Graphene
• Transport Spectroscopy of Sublattice-Resolved Resonant Scattering in Hydrogen-Doped Bilayer Graphene
• Sublattice dependence and gate-tunability of midgap and resonant states induced by native dopants in Bernal-stacked bilayer graphene
• Spin relaxation in fluorinated single and bilayer graphene
• Mobility gap and quantum transport in functionalized graphene bilayer
• Breakdown of the Hebel-Slichter effect in superconducting graphene due to the emergence of Yu-Shiba-Rusinov states at magnetic resonant scatterers
• Spin inversion in fluorinated graphene n-p junction
• Interplay of resonant states and Landau levels in functionalized graphene