Electrical conductivity in graphene with point defects
arXiv:1004.4606 · doi:10.1103/PhysRevB.82.085436
Abstract
The electrical conductivity of graphene containing point defects is studied within the binary alloy model in its dependence on the Fermi level position at the zero temperature. It is found that the minimal conductivity value does not have a universal character and corresponds to the impurity resonance energy rather than to the Dirac point position in the spectrum. The substantial asymmetry of the resulting dependence of the conductivity on the gate voltage magnitude is attributed as well to this same shift of the conductivity minimum to the resonance state energy.
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- Scanning tunneling spectroscopy and Dirac point resonances due to a single Co adatom on gated graphene
- Valley properties of doped graphene in a magnetic field
- Mobility gap and quantum transport in functionalized graphene bilayer
- Breakdown of the Hebel-Slichter effect in superconducting graphene due to the emergence of Yu-Shiba-Rusinov states at magnetic resonant scatterers
- Interplay of resonant states and Landau levels in functionalized graphene
- Electronic structure and transport in materials with flat bands: 2D materials and quasicrystals
- Dynamical diffusion and renormalization group equation for the Fermi velocity in doped graphene
- Probing divacancy defects in a zigzag graphene nanoribbon through RKKY exchange interaction