Quantum transport in graphene Hall bars: Effects of vacancy disorder
arXiv:1611.08065 · doi:10.1103/PhysRevB.94.235413
Abstract
Using the tight-binding model, we investigate the influence of vacancy disorder on electrical transport in graphene Hall bars in the presence of quantizing magnetic fields. Disorder, induced by a random distribution of monovacancies, breaks the graphene sublattice symmetry and creates states localized on the vacancies. These states are observable in the bend resistance, as well as in the total DOS. Their energy is proportional to the square root of the magnetic field, while their localization length is proportional to the cyclotron radius. At the energies of these localized states, the electron current flows around the monovacancies and, as we show, it can follow unexpected paths depending on the particular arrangement of vacancies. We study how these localized states change with the vacancy concentration, and what are the effects of including the next nearest neighbor hopping term. Our results are also compared with the situation when double vacancies are present in the system. Double vacancies also induce localized states, but their energy and magnetic field dependences are different. Their localization energy scales linearly with the magnetic field, and their localization length appears not to depend on the field strength.
arXiv comment12 pages, 13 figures. To be published in Phys. Rev. B
References in corpus (20)
- Electric Field Effect in Atomically Thin Carbon Films
- Two-Dimensional Gas of Massless Dirac Fermions in Graphene
- Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
- Kwant: a software package for quantum transport
- Electronic Properties of Graphene in a Strong Magnetic Field
- The missing atom as a source of carbon magnetism
- Landau Level Splitting in Graphene in High Magnetic Fields
- Disorder Induced Localized States in Graphene
- Scanning Tunneling Spectroscopy of Graphene on Graphite
- Modeling disorder in graphene
- Realization of a Tunable Artificial Atom at a Supercritically Charged Vacancy in Graphene
- Real-space calculation of the conductivity tensor for disordered topological matter
- Broken Symmetries, Zero-Energy Modes, and Quantum Transport in Disordered Graphene: From Supermetallic to Insulating Regimes
- Splitting of the Zero-Energy Landau Level and Universal Dissipative Conductivity at Critical Points in Disordered Graphene
- Unconventional Features in the Quantum Hall Regime of Disordered Graphene: Percolating Impurity States and Hall Conductance Quantization
- Adittional levels between Landau bands due to vacancies in graphene: towards a defect engineering
- Graphene-based heterojunction between two topological insulators
- Impurity invisibility in graphene: Symmetry guidelines for the design of efficient sensors
- Symmetry-protected coherent transport for diluted vacancies and adatoms in graphene
- Tuning antiferromagnetism of vacancies with magnetic fields in graphene nanoflakes
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- Dots and Boxes Algorithm for Peierls Substitution: Application to Multidomain Topological Insulators