Adittional levels between Landau bands due to vacancies in graphene: towards a defect engineering

Abstract

We describe the effects of vacancies on the electronic properties of a graphene sheet in the presence of a perpendicular magnetic field: from a single defect to an organized vacancy lattice. An isolated vacancy is the minimal possible inner edge, showing an antidotlike behaviour, which results in an extra level between consecutive Landau levels. Two close vacancies may couple to each other, forming a vacancy molecule tuned by the magnetic field. We show that a vacancy lattice introduce an extra band in between Landau levels with localization properties that could lead to extra Hall resistance plateaus.

arXiv comment6 pages, 4 figures, few comments added after referees - accepted to publication in Phys. Rev. B

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• Unconventional Features in the Quantum Hall Regime of Disordered Graphene: Percolating Impurity States and Hall Conductance Quantization
• Tunable resonances due to vacancies in graphene nanoribbons
• The shape of disorder broadened Landau subbands in graphene
• Electronic Transport in Graphene: Quantum Effects and Role of Local Defects
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