Conductivity and scattering in graphene bilayers: numerically exact results vs. Boltzmann approach
arXiv:1103.2412 · doi:10.1103/PhysRevB.84.115409
Abstract
We derive analytical expressions for the conductivity of bilayer graphene (BLG) using the Boltzmann approach within the the Born approximation for a model of Gaussian disorders describing both short- and long-range impurity scattering. The range of validity of the Born approximation is established by comparing the analytical results to exact tight-binding numerical calculations. A comparison of the obtained density dependencies of the conductivity with experimental data shows that the BLG samples investigated experimentally so far are in the quantum scattering regime where the Fermi wavelength exceeds the effective impurity range. In this regime both short- and long-range scattering lead to the same linear density dependence of the conductivity. Our calculations imply that bilayer and single layer graphene have the same scattering mechanisms. We also provide an upper limit for the effective, density dependent spatial extension of the scatterers present in the experiments.
a new appendix is added giving details of the derivation of the analytical expressions for the Boltzmann conducticity
References in corpus (23)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
- Suspended Graphene: a bridge to the Dirac point
- Carrier transport in 2D graphene layers
- Temperature dependent transport in suspended graphene
- Measurement of Scattering Rate and Minimum Conductivity in Graphene
- Colloquium: The transport properties of graphene: An introduction
- Quantum Hall Ferromagnetism in Graphene
- Electronic transport in graphene: A semi-classical approach including midgap states
- Electron transport in disordered graphene
- Tuning the effective fine structure constant in graphene: opposing effects of dielectric screening on short- and long-range potential scattering
- Resonant scattering by realistic impurities in graphene
- On resonant scatterers as a factor limiting carrier mobility in graphene
- Adsorbate-limited conductivity of graphene
- Unified description of the dc conductivity of monolayer and bilayer graphene at finite densities based on resonant scatterers
- Boltzmann transport and residual conductivity in bilayer graphene
- Conductivity and Fano factor in disordered graphene
- Electronic Transport in Disordered Bilayer and Trilayer Graphene
- Crossover from quantum to Boltzmann transport in graphene
- Scattering of charge carriers by point defects in bilayer graphene
- Effect of short- and long-range scattering in the conductivity of graphene: Boltzmann approach vs tight-binding calculations
- Finite Conductivity Minimum in Bilayer Graphene without Charge Inhomogeneities
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- Charge transport in two dimensions limited by strong short-range scatterers: Going beyond parabolic dispersion and Born approximation
- Disorder induced field effect transistor in bilayer and trilayer graphene
- Collective resonances near zero energy induced by a point defect in bilayer graphene