Conductivity and Fano factor in disordered graphene

Abstract

Using the recursive Green's function method, we study the problem of electron transport in a disordered single-layer graphene sheet. The conductivity is of order $e^2/h$ and its dependence on the carrier density has a scaling form that is controlled solely by the disorder strength and the ratio between the sample size and the correlation length of the disorder potential. The shot noise Fano factor is shown to have a narrow dip near the neutrality point for weak disorder and to develop a nearly doping independent behavior at strong disorder. Our results are in good qualitative and quantitative agreement with experiments and provide a way for extracting microscopic information about the magnitude of extrinsic disorder in graphene.

4 pages, 5 figures

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Cited by in corpus (17)

• The electronic properties of graphene
• Anderson Transitions
• Modeling disorder in graphene
• Charge Transport in Disordered Graphene-Based Low Dimensional Materials
• Conductance quantization and transport gap in disordered graphene nanoribbons
• Shot Noise in Ballistic Graphene
• Localization and Kosterlitz-Thouless Transition in Disordered Graphene
• Shot Noise in Graphene
• Contact resistance and shot noise in graphene transistors
• Crossover from quantum to Boltzmann transport in graphene
• Ballistic transport in disordered graphene
• Finite difference method for transport properties of massless Dirac fermions
• Evanescent wave transport and shot noise in graphene: ballistic regime and effect of disorder
• Charge transport and shot noise in ballistic graphene sheet
• Electronic shot noise in fractal conductors
• Dirac fermions in a power-law-correlated random vector potential
• Shot Noise Probing of Magnetic Ordering in Zigzag Graphene Nanoribbons