Scattering of charge carriers by point defects in bilayer graphene
arXiv:0706.1351 · doi:10.1103/PhysRevB.76.073411
Abstract
Theory of scattering of massive chiral fermions in bilayer graphene by radial symmetric potential is developed. It is shown that in the case when the electron wavelength is much larger than the radius of the potential the scattering cross-section is proportional to the electron wavelength. This leads to the mobility independent on the electron concentration. In contrast with the case of single-layer, neutral and charged defects are, in general, equally relevant for the resistivity of the bilayer graphene.
final version
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Cited by in corpus (17)
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- Quasiparticle Chirality in Epitaxial Graphene Probed at the Nanometer Scale
- Boltzmann transport and residual conductivity in bilayer graphene
- Effect of a single impurity on the local density of states in monolayer and bilayer graphene
- Role of pseudospin in quasiparticle interferences in epitaxial graphene probed by high-resolution scanning tunneling microscopy
- Electronic Transport in Disordered Bilayer and Trilayer Graphene
- Lattice-layer entanglement in Bernal-stacked bilayer graphene
- Semiclassical Boltzmann transport theory for graphene multilayers
- Electron Flow in Circular n-p Junctions of Bilayer Graphene
- Signature of chirality in scanning-probe imaging of charge flow in graphene
- Scattering of charge carriers in graphene induced by topological defects
- Quasi-bound States and Resonant Skew Scattering in Two-Dimensional Materials with a Mexican-Hat Dispersion
- Multiphoton cross sections of conductive electrons stimulated bremsstrahlung in doped bilayer graphene