High-field magnetoresistance revealing scattering mechanisms in graphene
arXiv:1205.0492 · doi:10.1103/PhysRevB.86.201409
Abstract
We show that the type of charge carrier scattering significantly affects the high-field magnetoresistance of graphene nanoribbons. This effect has potential to be used in identifying the scattering mechanisms in graphene. The results also provide an explanation for the experimentally found, intriguing differences in the behavior of the magnetoresistance of graphene Hall bars placed on different substrates. Additionally, our simulations indicate that the peaks in the longitudinal resistance tend to become pinned to fractionally quantized values, as different transport modes have very different scattering properties.
arXiv comment4 pages, 3 figures
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