Graphene on SrTiO3

Abstract

We study carrier transport through graphene on SrTiO${}_3$ substrates by considering relative contributions of Coulomb and resonant impurity scattering to graphene resistivity. We establish that charged impurity scattering must dominate graphene transport as the charge neutrality point is approached by lowering the carrier density, and in the higher density regime away from the neutrality point a dual model including both charged impurities and resonant defects gives an excellent description of graphene transport on SrTiO${}_3$ substrates. We further establish that the non-universal high-density behavior of $\sigma (n)$ in different graphene samples on various substrates arises from the competition among different scattering mechanisms, and it is in principle entirely possible for graphene transport to be dominated by qualitatively different scattering mechanisms at high and low carrier densities.

Substantially expanded revised final version including transport calculations comparing different substrates, published as Fast-Track Communication in Solid state Communications

References in corpus (25)

• Ultrahigh electron mobility in suspended graphene
• Boron nitride substrates for high-quality graphene electronics
• Suspended Graphene: a bridge to the Dirac point
• Dielectric function, screening, and plasmons in 2D graphene
• Charged Impurity Scattering in Graphene
• Carrier transport in 2D graphene layers
• A self-consistent theory for graphene transport
• Temperature dependent transport in suspended graphene
• Measurement of Scattering Rate and Minimum Conductivity in Graphene
• Electronic transport in graphene: A semi-classical approach including midgap states
• Tuning the effective fine structure constant in graphene: opposing effects of dielectric screening on short- and long-range potential scattering
• Unified description of the dc conductivity of monolayer and bilayer graphene at finite densities based on resonant scatterers
• Ground-state of graphene in the presence of random charged impurities
• Correlated charged impurity scattering in graphene
• Probing charge scattering mechanisms in suspended graphene by varying its dielectric environment
• Transport through graphene on SrTiO3
• Disorder-induced temperature-dependent transport in graphene: Puddles, impurities, activation, and diffusion
• Transport in gapped bilayer graphene: the role of potential fluctuations
• Effective medium theory for disordered two-dimensional graphene
• Theory of 2D transport in graphene for correlated disorder
• Non-monotonic temperature dependent transport in graphene grown by Chemical Vapor Deposition
• Transport in suspended graphene
• Imaging charge density fluctuations in graphene using Coulomb blockade spectroscopy
• Conductivity of graphene on boron nitride substrates
• Effect of charged impurity correlation on transport in monolayer and bilayer graphene

Cited by in corpus (10)

• Synergetic Behavior in 2D Layered Material/Complex Oxide Heterostructures
• Ferroelectric-like SrTiO3 surface dipoles probed by graphene
• Temperature-Dependent Electron-Electron Interaction in Graphene on SrTiO3
• The effect of Cr impurity to superconductivity in electron-doped BaFe2-xNixAs2
• Voltage Scaling of Graphene Device on SrTiO3 Epitaxial Thin Film
• Temperature and electric field dependence of spin relaxation in graphene on SrTiO${}_3$
• Direct comparison of graphene devices before and after transfer to different substrates
• Phenomenological plasmon broadening and relation to the dispersion
• Electronic response of graphene to linelike charge perturbations
• High-field magnetoresistance revealing scattering mechanisms in graphene