Synergetic Behavior in 2D Layered Material/Complex Oxide Heterostructures

Abstract

The marriage between a two-dimensional layered material (2DLM) and a complex transition metal oxide (TMO) results in a variety of physical and chemical phenomena that would not have been achieved in either material alone. Interesting recent discoveries in systems such as graphene/SrTiO3, graphene/LaAlO3/SrTiO3, graphene/ferroelectric oxide, MoS2/SrTiO3, and FeSe/SrTiO3 heterostructures include voltage scaling in field-effect transistors, charge state coupling across an interface, quantum conductance probing of the electrochemical activity, novel memory functions based on charge traps, and greatly enhanced superconductivity. In this progress report, we review various properties and functionalities appearing in numerous different 2DLM/TMO heterostructure systems. The results imply that the multidimensional heterostructure approach based on the disparate material systems leads to an entirely new platform for the study of condensed matter physics and materials science. The heterostructures are also highly relevant technologically, as each constituent material is a promising candidate for next-generation opto-electronic devices.

37 pages, 8 figures

References in corpus (25)

• The electronic properties of graphene
• Ultrahigh electron mobility in suspended graphene
• 2D materials and van der Waals heterostructures
• Boron nitride substrates for high-quality graphene electronics
• Suspended Graphene: a bridge to the Dirac point
• Atomic Structure of Graphene on SiO2
• Superconductivity in single-layer films of FeSe with a transition temperature above 100 K
• Electrical Transport Properties of Single-Layer WS2
• Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
• Field-Effect Transistors Based on Few-Layered alpha-MoTe_2
• Gate-controlled non-volatile graphene-ferroelectric memory
• Graphene field effect transistors with ferroelectric gating
• High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides
• High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides (Supplementary Information)
• Unusual Resistance Hysteresis in n-Layer Graphene Field Effect Transistors Fabricated on Ferroelectric Pb(Zr_0.2Ti_0.8)O_3
• High temperature superconducting FeSe films on SrTiO3 substrates
• Atomic and electronic structures of FeSe monolayer and bilayer thin films on SrTiO${}_3$ (001): a first-principles study
• Extrinsic and Intrinsic Charge Trapping at the Graphene/Ferroelectric Interface
• Wafer-scale graphene/ferroelectric hybrid devices for low-voltage electronics
• Surface properties of atomically flat poly-crystalline SrTiO3
• Graphene on insulating crystalline substrates
• Fractionally delta-doped oxide superlattices for higher carrier mobilities
• Highly oriented SrTiO3 thin film on graphene substrate
• Optical conductivity renormalization of graphene on SrTiO${}_3$ due to resonant excitonic effects mediated by Ti 3\textit{d} orbitals
• Temperature-Dependent Electron-Electron Interaction in Graphene on SrTiO3