Magnetic proximity effect at the interface of two-dimensional materials and magnetic oxide insulators
arXiv:2304.00356 · doi:10.1016/j.jallcom.2022.164830
Abstract
Two-dimensional (2D) materials provide a platform for developing novel spintronic devices and circuits for low-power electronics. In particular, inducing magnetism and injecting spins in graphene have promised the emerging field of graphene spintronics. This review focuses on the magnetic proximity effect at the interface of 2D materials and magnetic oxide insulators. We highlight the unique spin-related phenomena arising from magnetic exchange interaction and spin-orbital coupling in 2D materials coupled with magnetic oxides. We also describe the fabrication of multifunctional hybrid devices based on spin transport. We conclude with a perspective of the field and highlight challenges for the design and fabrication of 2D spintronic devices and their potential applications in information storage and logic devices.
32 pages, 16 figures, 106 references
References in corpus (19)
- Electric Field Effect in Atomically Thin Carbon Films
- Half-Metallic Graphene Nanoribbons
- The Valley Hall Effect in MoS2 Transistors
- Graphene Spintronics
- Weak ferromagnetism and magnetoelectric coupling in bismuth ferrite
- Quantum Anomalous Hall Effect in Graphene from Rashba and Exchange Effects
- Van der Waals heterostructures for spintronics and opto-spintronics
- Proximity-induced ferromagnetism in graphene revealed by anomalous Hall effect
- Spin transport in proximity induced ferromagnetic graphene
- Quantum Anomalous Hall Effect in Graphene Proximity Coupled to an Antiferromagnetic Insulator
- Magnetic Insulator-Induced Proximity Effects in Graphene: Spin Filtering and Exchange Splitting Gaps
- Magnetic Moment Formation in Graphene Detected by Scattering of Pure Spin Currents
- Layer-Resolved Magnetic Proximity Effect in van der Waals Heterostructures
- Integration of the Ferromagnetic Insulator EuO onto Graphene
- Quantum Anomalous Hall Effects in Graphene from Proximity-Induced Uniform and Staggered Spin-Orbit and Exchange Coupling
- Atomically precise interfaces from non-stoichiometric deposition
- Synergetic Behavior in 2D Layered Material/Complex Oxide Heterostructures
- Room-temperature colossal magnetoresistance in terraced single-layer graphene
- Chiral charge pumping in graphene deposited on a magnetic insulator