Nonlocal transistor based on pure crossed Andreev reflection in a EuO-graphene/superconductor hybrid structure
arXiv:1601.03111 · doi:10.1103/PhysRevB.93.041422
Abstract
We study the interband transport in a superconducting device composed of graphene with EuO-induced exchange interaction. We show that pure crossed Andreev reflection can be generated exclusively without the parasitic local Andreev reflection and elastic cotunnelling over a wide range of bias and Fermi levels in an EuO-graphene/superconductor/EuO-graphene device. The pure non-local conductance exhibits rapid on/off switching and oscillatory behavior when the Fermi levels in the normal and the superconducting leads are varied. The oscillation reflects the quasiparticle propagation in the superconducting lead and can be used as a tool to probe the subgap quasiparticle mode in superconducting graphene, which is inaccessible from the current-voltage characteristics. Our results suggest that the device can be used as a highly tunable transistor that operates purely in the non-local and spin-polarized transport regime.
5 pages, 4 figures; To appear in Phys. Rev. B
References in corpus (19)
- Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
- Valley filter and valley valve in graphene
- Gate-induced insulating state in bilayer graphene devices
- STM Spectroscopy of ultra-flat graphene on hexagonal boron nitride
- Andreev reflection and Klein tunneling in graphene
- Specular Andreev reflection in graphene
- Proximity-induced ferromagnetism in graphene revealed by anomalous Hall effect
- Topological confinement in bilayer graphene
- Giant and tunable valley degeneracy splitting in MoTe2
- Magnetic Insulator-Induced Proximity Effects in Graphene: Spin Filtering and Exchange Splitting Gaps
- Josephson effect in ballistic graphene
- Exciton condensation and charge fractionalization in a topological insulator film
- Near-unity Cooper pair splitting efficiency
- Specular Interband Andreev Reflections in Graphene
- Integration of the Ferromagnetic Insulator EuO onto Graphene
- Crossed Andreev reflection in a graphene bipolar transistor
- Spin filter and spin valve in ferromagnetic graphene
- Valley-based Cooper Pair Splitting via Topologically Confined Channels in Bilayer Graphene
- Nonlocal Andreev reflection, fractional charge and current-phase relation in topological bilayer exciton condensate junctions
Cited by in corpus (12)
- Universal Scaling Laws in Schottky Heterostructures Based on Two-Dimensional Materials
- Multiferroic van der Waals heterostructure FeCl/ScCO: Nonvolatile electrically switchable electronic and spintronic properties
- Proximity coupling in superconductor-graphene heterostructures
- Tunable Anomalous Andreev Reflection and Triplet Pairings in Spin Orbit Coupled Graphene
- Crossed Andreev effects in two-dimensional quantum Hall systems
- Perfect crossed Andreev reflection in Dirac hybrid junctions in the quantum Hall regime
- Electrical control of crossed Andreev reflection and spin-valley switch in antiferromagnet/superconductor junctions
- Spin-filtered and Spatially Distinguishable Crossed Andreev Reflection in a Silicene-Superconductor Junction
- Magnetic proximity effect at the interface of two-dimensional materials and magnetic oxide insulators
- Spin-selectable, region-tunable negative differential resistance in graphene double ferromagnetic barriers
- Growth of EuO single crystals at reduced temperatures
- Spin-Valley Beam Splitter in Graphene