Proximity induced quantum anomalous Hall effect in graphene/EuO hetero-structures

Abstract

In a heterostructure of graphene and the ferromagnetic insulator EuO, the Eu atoms induce proximity exchange and inter-valley interactions in the graphene layer. Constrained by the lattice symmetries, and guided by ab initio calculations, a model Hamiltonian is constructed that describes the low-energy bands. Band parameters such as proximity induced exchange splitting, spin orbit coupling, and inter-valley interaction are determined. Calculations of the Chern number identify the conditions under which the hetero-structures exhibit topologically non-trivial bands that give rise to the quantum anomalous Hall effect with a Hall conductivity of ${\sigma }_{xy}=2e^2/h$.

8 pages, 7 figures

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• Electrically tunable exchange splitting in bilayer graphene on monolayer Cr${}_2$X${}_2$Te${}_6$ with X=Ge, Si, and Sn
• Twist- and gate-tunable proximity spin-orbit coupling, spin relaxation anisotropy, and charge-to-spin conversion in heterostructures of graphene and transition-metal dichalcogenides
• Quantum Anomalous Hall Effect in Magnetic Doped Topological Insulators and Ferromagnetic Spin-Gapless Semiconductors -- A Perspective Review
• Engineering Proximity Exchange by Twisting: Reversal of Ferromagnetic and Emergence of Antiferromagnetic Dirac Bands in Graphene/Cr${}_2$Ge${}_2$Te${}_6$
• Effective Interactions in a Graphene Layer Induced by the Proximity to a Ferromagnet
• Magnetic proximity effect at the interface of two-dimensional materials and magnetic oxide insulators
• Spin-selectable, region-tunable negative differential resistance in graphene double ferromagnetic barriers
• Electric-field-induced extremely large change in resistance in graphene ferromagnets
• Reversible edge spin currents in antiferromagnetically proximitized dichalcogenides
• Growth and Characterisation Studies of Eu${}_3$O${}_4$ Thin Films Grown on Si/SiO${}_2$ and Graphene