Electric-field-induced extremely large change in resistance in graphene ferromagnets

Abstract

A colossal magnetoresistance ($\sim 100\times 10^3\%$) and an extremely large magnetoresistance ($\sim 1\times 10^6\%$) have been previously explored in manganite perovskites and Dirac materials, respectively. However, the requirement of an extremely strong magnetic field (and an extremely low temperature) makes them not applicable for realistic devices. In this work, we propose a device that can generate even larger changes in resistance in a zero-magnetic field and at a high temperature. The device is composed of a graphene under two strips of yttrium iron garnet (YIG), where two gate voltages are applied to cancel the heavy charge doping in the YIG-induced half-metallic ferromagnets. By calculations using the Landauer-Büttiker formalism, we demonstrate that, when a proper gate voltage is applied on the free ferromagnet, changes in resistance up to $305\times 10^6\%$ ($16\times 10^3\%$) can be achieved at the liquid helium (nitrogen) temperature and in a zero magnetic field. We attribute such a remarkable effect to a gate-induced full-polarization reversal in the free ferromagnet, which results in a metal-state to insulator-state transition in the device. We also find that, the proposed effect can be realized in devices using other magnetic insulators such as EuO and EuS. Our work should be helpful for developing a realistic switching device that is energy saving and CMOS-technology compatible.

arXiv comment8 pages with 8 figures; Accepted by Journal of Physics D: Applied Physics

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• Engineering Proximity Exchange by Twisting: Reversal of Ferromagnetic and Emergence of Antiferromagnetic Dirac Bands in Graphene/Cr${}_2$Ge${}_2$Te${}_6$
• Proximity magnetoresistance in graphene induced by magnetic insulators
• Spin-selectable, region-tunable negative differential resistance in graphene double ferromagnetic barriers
• Magnetic dielectric- graphene- ferroelectric system as a promising non-volatile device for modern spintronics
• Bias dependent spin injection into graphene on YIG through bilayer hBN tunnel barriers
• Nontrivial magnetic field related phenomena in the single-layer graphene on ferroelectric substrate