Negative differential resistances with back gate-controlled lowest operation windows in graphene double barrier resonant tunneling diodes
arXiv:1210.2033 · doi:10.1063/1.4794952
Abstract
We theoretically investigate negative differential resistance (NDR) of massless and massive Dirac Fermions in double barrier resonant tunneling diodes based on sufficiently short and wide graphene strips. The current-voltage characteristics calculated in a rotated pseudospin space show that, the NDR feature only presents with appropriate structural parameters for the massless case and the peak-to-valley current ratio can be enhanced exponentially by a tunable band gap. Remarkably, the lowest NDR operation window is nearly structure-free and can be almost solely controlled by a back gate, which may have potential applications in NDR devices with the operation window as a crucial parameter.
5 pages, 5 figures
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Cited by in corpus (5)
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- Electric-field-induced extremely large change in resistance in graphene ferromagnets
- Ferromagnetic barrier induced negative differential conductance on the surface of a topological insulator