Double-gated graphene-based devices

Abstract

We discuss transport through double gated single and few layer graphene devices. This kind of device configuration has been used to investigate the modulation of the energy band structure through the application of an external perpendicular electric field, a unique property of few layer graphene systems. Here we discuss technological details that are important for the fabrication of top gated structures, based on electron-gun evaporation of SiO${}_2$. We perform a statistical study that demonstrates how --contrary to expectations-- the breakdown field of electron-gun evaporated thin SiO${}_2$ films is comparable to that of thermally grown oxide layers. We find that a high breakdown field can be achieved in evaporated SiO${}_2$ only if the oxide deposition is directly followed by the metallization of the top electrodes, without exposure to air of the SiO${}_2$ layer.

Replaced with revised version. To appear on New Journal of Physics

References in corpus (13)

• Electric Field Effect in Atomically Thin Carbon Films
• Chiral tunneling and the Klein paradox in graphene
• Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
• Making graphene visible
• Gate-induced insulating state in bilayer graphene devices
• Asymmetry gap in the electronic band structure of bilayer graphene
• Quantum interference and Klein tunneling in graphene heterojunctions
• Evidence of Klein tunneling in graphene p-n junctions
• Transport measurements across a tunable potential barrier in graphene
• Electronic transport and quantum Hall effect in bipolar graphene p-n-p junction
• Visibility of graphene flakes on a dielectric substrate
• Quantum dot behavior in graphene nanoconstrictions
• Gate-induced interlayer asymmetry in ABA-stacked trilayer graphene

Cited by in corpus (15)

• Tuneable electronic properties in graphene
• Tuning the electronic transport properties of graphene through functionalisation with fluorine
• Stacking-order dependent transport properties of trilayer graphene
• Fabry-Pérot interference in gapped bilayer graphene with broken anti-Klein tunneling
• Anomalous sequence of quantum Hall liquids revealing tunable Lifshitz transition in bilayer graphene
• Side-gate leakage and field emission in all-graphene field effect transistors on SiO2/Si substrate
• Transport in superlattices on single layer graphene
• Negative differential resistances with back gate-controlled lowest operation windows in graphene double barrier resonant tunneling diodes
• Electrical transport in suspended and double gated trilayer graphene
• Gate-controlled conductance through bilayer graphene ribbons
• Band gap and broken chirality in single-layer and bilayer graphene
• Gate tunable non-linear currents in bilayer graphene diodes
• Full control of solid-state electrolytes for electrostatic gating
• Electron flow in split-gated bilayer graphene
• Landau level splitting due to graphene superlattices