Gate tunable non-linear currents in bilayer graphene diodes

Abstract

Electric transport of double gated bilayer graphene devices is studied as a function of charge density and bandgap. A top gate electrode can be used to control locally the Fermi level to create a pn junction between the double-gated and single-gated region. These bilayer graphene pn diodes are characterized by non-linear currents and directional current rectification, and we show the rectified direction of the source-drain voltage can be controlled by using gate voltages. A systematic study of the pn junction characteristics allows to extract a gate-dependent bandgap value which ranges from 0 meV to 130 meV.

4 pages

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Cited by in corpus (4)

• Transport spectroscopy of ultraclean tunable band gaps in bilayer graphene
• Direct observation of a gate tunable band-gap in electrical transport in ABC-trilayer graphene
• Disorder induced field effect transistor in bilayer and trilayer graphene
• Electron-electron interactions in non-equilibrium bilayer graphene