Origin of New Broad Raman D and G Peaks in Annealed Graphene

Abstract

Since graphene, a single sheet of graphite, has all of its carbon atoms on the surface, its property is very sensitive to materials contacting the surface. Herein, we report novel Raman peaks ob-served in annealed graphene and elucidate their chemical origins by Raman spectroscopy and atomic force microscopy (AFM). Graphene annealed in oxygen-free atmosphere revealed very broad additional Raman peaks overlapping the D, G and 2D peaks of graphene itself. Based on the topographic confirmation by AFM, the new Raman peaks were attributed to amorphous carbon formed on the surface of graphene by carbonization of environmental hydrocarbons. While the carbonaceous layers were formed for a wide range of annealing temperature and time, they could be effectively removed by prolonged annealing in vacuum. This study underlines that spectral features of graphene and presumably other 2-dimensional ma-terials are highly vulnerable to interference by foreign materials of molecular thickness.

15 pages, 3 figures

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• Plasma-enhanced atomic layer deposition of Al${}_2$O${}_3$ on graphene using monolayer hBN as interfacial layer
• Effect of annealing on Raman scattering spectra of monolayer graphene samples gradually disordered by ion irradiation
• Direction-Controlled Chemical Doping for Reversible G-Phonon Mixing in ABC Trilayer Graphene
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