All-Metallic Electrically-Gated Tantalum Diselenide Switches and Logic Circuits

Abstract

We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, the layers of 2H-TaSe2 were exfoliated mechanically from single crystals grown by the chemical vapor transport method. Devices with nanometer-scale thicknesses exhibit strongly non-linear current-voltage characteristics, unusual optical response, and electrical gating at room temperature. We have found that the drain-source current in thin-film 2H-TaSe2-Ti/Au devices reproducibly shows an abrupt transition from a highly resistive to a conductive state, with the threshold tunable via the gate voltage. Such current-voltage characteristics can be used in principle for implementing radiation-hard all-metallic logic circuits. These results may open new application space for thin films of van der Waals materials.

22 pages; 8 figures

References in corpus (3)

• Electric Field Effect in Atomically Thin Carbon Films
• Modification of Graphene Properties due to Electron-Beam Irradiation
• Phonon and Thermal Properties of Exfoliated Tantalum Diselenide Thin Films

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• Two-Dimensional TaSe2 Metallic Crystals: Spin-Orbit Scattering Length and Breakdown Current Density
• Strain Engineering a $4a\times \sqrt{3}a$ Charge Density Wave Phase in Transition Metal Dichalcogenide 1T-VSe${}_2$
• Low-Frequency Noise Spectroscopy of Charge-Density-Wave Phase Transitions in Vertical Quasi-2D Devices
• Light emission from the layered metal 2H-TaSe${}_2$ and its potential applications
• Effect of Strain on Charge Density Wave Order in the Holstein Model
• The Influence of Dimensionality on the Charge Density Wave Transition and Its Application on Mid-infrared Photodetection