Low-Frequency Noise Spectroscopy of Charge-Density-Wave Phase Transitions in Vertical Quasi-2D Devices

Abstract

We report results regarding the electron transport in vertical quasi-2D layered 1T-TaS2 charge-density-wave devices. The low-frequency noise spectroscopy was used as a tool to study changes in the cross-plane electrical characteristics of the quasi-2D material below room temperature. The noise spectral density revealed strong peaks - changing by more than an order-of-magnitude - at the temperatures closely matching the electrical resistance steps. Some of the noise peaks appeared below the temperature of the commensurate to nearly-commensurate charge-density-wave transition, possibly indicating the presence of the debated "hidden" phase transitions. These results confirm the potential of the noise spectroscopy for investigations of electron transport and phase transitions in novel materials.

arXiv comment16 pages; 5 figures

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Cited by in corpus (7)

• Electric Switching of the Charge-Density-Wave and Normal Metallic Phases in Tantalum Disulfide Thin-Film Devices
• Thermally-Driven Charge-Density-Wave Transitions in 1T-TaS2 Thin-Film Devices: Prospects for GHz Switching Speed
• Depinning of the Charge-Density Waves in Quasi-2D 1T-TaS2 Devices Operating at Room Temperature
• Charge-Density-Wave Devices Printed with the Ink of Chemically Exfoliated 1T-TaS${}_2$ Fillers
• Current Oscillations in Quasi-2D Charge-Density-Wave 1T-TaS2 Devices: Revisiting the "Narrow Band Noise" Concept
• Probing charge density wave phases and the Mott transition in $1T$-TaS${}_2$ by inelastic light scattering
• Imaging of electrically controlled van der Waals layer stacking in 1T-TaS2