137 citations · 556 across the 7 of their papers we have counts for
7 papers
Magnonic Interferometric Switch for Multi-Valued Logic Circuits
M. Balynsky, A. Kozhevnikov, Y. Khivintsev +10
We investigated a possible use of the magnonic interferometric switches in multi-valued logic circuits. The switch is a three-terminal device consisting of two spin channels where…
Gas Sensing with h-BN Capped MoS2 Heterostructure Thin Film Transistors
G. Liu, S. L. Rumyantsev, C. Jiang +2
We have demonstrated selective gas sensing with molybdenum disulfide (MoS2) thin films transistors capped with a thin layer of hexagonal boron nitride (h-BN). The resistance change…
High-Temperature Performance of MoS2 Thin-Film Transistors: DC and Pulse Current-Voltage Characteristics
C. Jiang, S. L. Rumyantsev, R. Samnakay +2
The measurements of the high - temperature current - voltage characteristics of MoS2 thin - film transistors show that the devices remain functional to temperatures of at least as…
Selective Chemical Vapor Sensing with Few-Layer MoS2 Thin-Film Transistors
R. Samnakay, C. Jiang, S. L. Rumyantsev +2
We demonstrated selective gas sensing with MoS2 thin-film transistors using the change in the channel conductance, characteristic transient time and low-frequency current fluctuati…
Low-Frequency 1/f Noise in Molybdenum Disulfide Transistors
J. Renteria, R. Samnakay, S. L. Rumyantsev +3
We report on the results of the low-frequency (1/f, where f is frequency) noise measurements in MoS2 field-effect transistors revealing the relative contributions of the MoS2 chann…
All-Metallic Electrically-Gated Tantalum Diselenide Switches and Logic Circuits
J. Renteria, R. Samnakay, C. Jiang +8
We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, th…