Gas Sensing with h-BN Capped MoS2 Heterostructure Thin Film Transistors
arXiv:1507.00308 · doi:10.1109/LED.2015.2481388
Abstract
We have demonstrated selective gas sensing with molybdenum disulfide (MoS2) thin films transistors capped with a thin layer of hexagonal boron nitride (h-BN). The resistance change was used as a sensing parameter to detect chemical vapors such as ethanol, acetonitrile, toluene, chloroform and methanol. It was found that h-BN dielectric passivation layer does not prevent gas detection via changes in the source-drain current in the active MoS2 thin film channel. The use of h-BN cap layers (thickness H=10 nm) in the design of MoS2 thin film gas sensors improves device stability and prevents device degradation due to environmental and chemical exposure. The obtained results are important for applications of van der Waals materials in chemical and biological sensing.
3 pages; 4 figures
References in corpus (7)
- Detection of Individual Gas Molecules Absorbed on Graphene
- Atomically thin p-n junctions with van der Waals heterointerfaces
- Strong Oxidation Resistance of Atomically Thin Boron Nitride Nanosheets
- Accessing the transport properties of pristine few-layer black phosphorus by van der Waals passivation in inert atmosphere
- Strain Engineering of Selective Chemical Adsorption on Monolayer MoS_2
- Selective Chemical Vapor Sensing with Few-Layer MoS2 Thin-Film Transistors
- Low-Frequency 1/f Noise in MoS2 Thin-Film Transistors: Comparison of Single and Multilayer Structures