Anomalous Electron Transport in Field-Effect Transistors with Titanium Ditelluride Semimetal Thin-Film Channels

Abstract

We report on "graphene-like" mechanical exfoliation of thin films of titanium ditelluride and investigation of their electronic properties. The exfoliated crystalline TiTe2 films were used as the channel layers in the back-gated field-effect transistors fabricated with Ti/Al/Au metal contacts on SiO2/Si substrates. The room-temperature current-voltage characteristics revealed strongly non-linear behavior with signatures of the source-drain threshold voltage similar to those observed in the charge-density-wave devices. The drain-current showed an unusual non-monotonic dependence on the gate bias characterized by the presence of multiple peaks. The obtained results can be potentially used for implementation of the non-Boolean logic gates.

11 pages, 4 figures

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• Phonon and Thermal Properties of Exfoliated Tantalum Diselenide Thin Films
• Manipulating charge-density-wave in monolayer $1T$-TiSe${}_2$ by strain and charge doping: A first-principles investigation
• Fast and reliable identification of atomically thin layers of TaSe2 crystals
• All-Metallic Electrically-Gated Tantalum Diselenide Switches and Logic Circuits
• Manipulating superconductivity of $1T$-TiTe${}_2$ by high pressure
• Enhancing charge-density-wave order in 1T-TiSe2 nanosheet by encapsulation with hexagonal Boron Nitride
• Indications for Lifshitz transitions in the nodal-line semimetal ZrSiTe induced by interlayer interaction
• Three-Dimensional Fermi-Surface and Electron-Phonon Coupling in Semimetallic 1T-TiTe2 studied by Angle-Resolved Photoemission Spectroscopy
• Graphene-like metallic-on-silicon field effect transistor