A Dual Gate Spin Field Effect Transistor With Very Low Switching Voltage and Large ON-to-OFF Conductance Ratio
arXiv:0711.1482 · doi:10.1016/j.physe.2007.10.119
Abstract
We propose and analyze a novel dual-gate Spin Field Effect Transistor (SpinFET) with half-metallic ferromagnetic source and drain contacts. The transistor has two gate pads that can be biased independently. It can be switched ON or OFF with a few mV change in the differential bias between the two pads, resulting in extremely low dynamic power dissipation during switching. The ratio of ON to OFF conductance remains fairly large (~ 60) up to a temperature of 10 K. This device also has excellent inverter characteristics, making it attractive for applications in low power and high density Boolean logic circuits.
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