A scheme for spin transistor with extremely large on/off current ratio

Abstract

Quantum wires with periodic local Rashba spin-orbit couplings are proposed for a higher performance of spin field-effect transistor. Fano-Rashba quantum interference due to the spin-dependent modulated structure gives rise to a broad energy range of vanishingly small transmission. Tuning Rashba spin-orbit couplings can provide the on- or off-currents with extremely large on/off current ratios even in the presence of a strong disorder.

4 pages, 6 figures, J. Appl. Phys., in press

References in corpus (6)

• Ballistic spin-polarized transport and Rashba spin precession in semiconductor nanowires
• Resonance Lineshapes in Quasi-One-Dimensional Scattering
• Fano-Rashba effect in a quantum wire
• Strongly modulated transmission of a spin-split quantum wire with local Rashba interaction
• Robust strongly-modulated transmission of a $T$-shaped structure with local Rashba interaction
• A Dual Gate Spin Field Effect Transistor With Very Low Switching Voltage and Large ON-to-OFF Conductance Ratio

Cited by in corpus (6)

• Quasi-bound states and Fano effect in T-shaped graphene nanoribbons
• Strongly modulated transmissions in gapped armchair graphene nanoribbons with sidearm or on-site gate voltage
• Electron spin relaxation in n-type InAs quantum wires
• Spin-dependent electron transport in a Rashba quantum wire with rough edges
• Spin-filtering and charge- and spin-switching effects in a quantum wire with periodically attached stubs
• Interference of Fano-Rashba conductance dips