Robust strongly-modulated transmission of a $T$-shaped structure with local Rashba interaction

Abstract

We propose a scheme of spin transistor using a $T$-shaped structure with local Rashba interaction. A wide antiresonance energy gap appears due to the interplay of two types of interference, the Fano-Rashba interference and the structure interference. A large current from the gap area can be obtained via changing the Rashba strength and/or the length of the sidearm by using gate voltage. The robustness of the antiresonance gap against strong disorder is demonstrated and shows the feasibility of this structure for the real application.

arXiv comment4 pages, 3 figures, To be published in PRB

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Cited by in corpus (10)

• Thermoelectric effects in graphene with local spin-orbit interaction
• A scheme for spin transistor with extremely large on/off current ratio
• Hole spin relaxation in $p$-type GaAs quantum wires
• Quasi-bound states and Fano effect in T-shaped graphene nanoribbons
• Strongly modulated transmissions in gapped armchair graphene nanoribbons with sidearm or on-site gate voltage
• Seebeck effects in two-dimensional spin transistors
• Electron spin relaxation in n-type InAs quantum wires
• Spin-dependent electron transport in a Rashba quantum wire with rough edges
• Interference of Fano-Rashba conductance dips
• Localized states in a semiconductor quantum ring with a tangent wire