paper

Localized states in a semiconductor quantum ring with a tangent wire

arXiv:1406.3438 · doi:10.1063/1.4893938

Abstract

We extend a special kind of localized state trapped at the intersection due to the geometric confinement, first proposed in a three-terminal-opening T-shaped structure [Euro. Phys. Lett. {\bf 55}, 539 (2001)], into a ring geometry with a tangent connection to the wire. In this ring geometry, there exists one localized state trapped at the intersection with energy lying inside the lowest subband. We systematically study this localized state and the resulting Fano-type interference due to the coupling between this localized state and the continuum ones. It is found that the increase of the inner radius of ring weakens the coupling to the continuum ones and the asymmetric Fano dip fades away. A wide energy gap in transmission appears due to the interplay of two types of antiresonances: the Fano-type antiresonance and the structure antiresonance. The size of this antiresonance gap can be modulated by adjusting the magnetic flux. Moreover, a large transmission amplitude can be obtained in the same gap area. The strong robustness of the antiresonance gap is demonstrated showing the feasibility of the proposed geometry for a real application.

6 pages, 7 figures

References in corpus (10)

Localized states in a semiconductor quantum ring with a tangent wire · wovepaper