Hole spin relaxation in $p$-type GaAs quantum wires

Abstract

We investigate the spin relaxation of $p$-type GaAs quantum wires by numerically solving the fully microscopic kinetic spin Bloch equations. We find that the quantum-wire size influences the spin relaxation time effectively by modulating the energy spectrum and the heavy-hole--light-hole mixing of wire states. The effects of quantum-wire size, temperature, hole density, and initial polarization are investigated in detail. We show that, depending on the situation, the spin relaxation time can either increase or decrease with hole density. Due to the different subband structure and effects arising from spin-orbit coupling, many spin-relaxation properties are quite different from those of holes in the bulk or in quantum wells, and the inter-subband scattering makes a marked contribution to the spin relaxation.

10 pages, 7 figures, Phys. Rev. B 78, 2008, in press

References in corpus (9)

• High temperature spin dephasing in n-typed GaAs quantum wells
• Spin coherence of a two-dimensional electron gas induced by resonant excitation of trions and excitons in CdTe/(Cd,Mg)Te quantum wells
• Hot-electron effect in spin dephasing in $n$-type GaAs quantum wells
• Multi-subband effect in spin dephasing in semiconductor quantum wells
• Spin relaxation under identical Dresselhaus and Rashba coupling strengths in GaAs quantum wells
• Spin-dependent transport in lateral periodic magnetic modulations: a novel scheme for spin filters
• Robust strongly-modulated transmission of a $T$-shaped structure with local Rashba interaction
• Tailoring hole spin splitting and polarization in nanowires
• Manipulation of spin dephasing in InAs quantum wires