Electric field screening in atomically thin layers of MoS2: the role of interlayer coupling

Abstract

The aim of this work is to study the electrostatic screening by single and few-layer MoS2 sheets by means of electrostatic force microscopy in combination with a non-linear Thomas-Fermi Theory to interpret the experimental results. We find that a continuum model of decoupled layers, which satisfactorily reproduces the electrostatic screening for graphene and graphite, cannot account for the experimental observations. A three-dimensional model with an interlayer hopping parameter can on the other hand successfully account for the observed electric field screening by MoS2 nanolayers, pointing out the important role of the interlayer coupling in the screening of MoS2.

arXiv comment13 pages, 3 figures, include supporting information

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• Hopping Transport through Defect-induced Localized States in Molybdenum Disulfide
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• Atomically Thin Boron Nitride: Unique Properties and Applications
• Electronic properties of the MoS2-WS2 heterojunction
• Towards barrier free contact to MoS2 using graphene electrodes
• Electronic properties of single-layer and multilayer transition metal dichalcogenides $M{X}_2$ ($M=$ Mo, W and $X=$ S, Se)
• TiS3 transistors with tailored morphology and electrical properties
• Reduced dielectric screening and enhanced energy transfer in single and few-layer MoS2
• Spin-Orbit mediated spin relaxation in monolayer MoS2
• Electric field screening in atomically thin layers of MoS2: the role of interlayer coupling
• Dielectric Screening in Atomically Thin Boron Nitride Nanosheets
• Plasmons and screening in a monolayer of MoS${}_2$
• Stark effect spectroscopy of mono- and few-layer MoS${}_2$
• Plasmonics with two-dimensional semiconductors "beyond graphene": from basic research to technological applications
• Interactions and superconductivity in heavily doped MoS2
• Single-layer MoS2 roughness and sliding friction quenching by interaction with atomically flat substrates
• Asymmetric Electric Field Screening in van der Waals Heterostructures
• Dielectric Screening by 2D Substrates
• Dimensional cross-over of the bandgap transition in quasi-two-dimensional MoS2
• Layer-dependent anisotropic electronic structure of freestanding quasi-two-dimensional MoS${}_2$
• Layer-dependent exciton polarizability and the brightening of dark excitons in few-layer black phosphorus
• Electric Contributions to Magnetic Force Microscopy Response from Graphene and MoS2 Nanosheets
• Electron spin diffusion in monolayer MoS${}_2$
• Semiconductor channel mediated photodoping in h-BN encapsulated monolayer MoSe2 phototransistors
• A non-invasive sub-surface electrical probe to encapsulated layers in van der Waals heterostructures
• Photodiodes based in La0.7Sr0.3MnO3/single layer MoS2 hybrid vertical heterostructures
• Ultrahigh-Gain Phototransistors Based on Graphene-MoS2 Heterostructures
• Electric Field Effects on Graphene Materials
• Correlation of structural, nanomechanical and electrostatic properties of single and few-layers MoS2