Electron spin diffusion in monolayer MoS
arXiv:1403.5629 · doi:10.1103/PhysRevB.89.205401
Abstract
Electron spin diffusion is investigated in monolayer MoS in the absence of external electric and magnetic fields. The electron-impurity scattering, which is shown to play a negligible role in spin relaxation in time domain in this material, has a marked effect on the in-plane spin diffusion due to the anisotropic spin precession frequency in the spatial domain. With the electron-impurity and inter-valley electron-phonon scatterings separately included in the scattering term, we study the intra- and inter-valley diffusion processes of the in-plane spins by analytically solving the kinetic spin Bloch equations. The intra-valley process is found to be dominant in the in-plane spin diffusion, in contrast to the case of spin relaxation in time domain, where the inter-valley process can be comparable to or even more important than the intra-valley one. For the intra-valley process, we find that the in-plane spin diffusion is suppressed with the increase of impurity density but effectively enhanced by increasing electron density in both the degenerate and nondegenerate limits. We also take into account the electron-electron Coulomb scattering in the intra-valley process. Interestingly, we find that in the nondegenerate limit, the intra-valley spin diffusion length presents an opposite trend in the electron density dependence compared to the one with only electron-impurity scattering.
6 pages, 1 figure
References in corpus (12)
- Two Dimensional Atomic Crystals
- Valley polarization in MoS2 monolayers by optical pumping
- Quasiparticle band structures and optical properties of strained monolayer MoS2 and WS2
- Robust optical emission polarization in MoS2 monolayers through selective valley excitation
- Electric field screening in atomically thin layers of MoS2: the role of interlayer coupling
- Kinetic theory of spin transport in n-typed semiconductor quantum wells
- Anisotropic spin transport in GaAs quantum wells in the presence of competing Dresselhaus and Rashba spin-orbit-coupling strengths
- Electron spin relaxation in graphene from a microscopic approach: Role of electron-electron interaction
- Electron spin diffusion and transport in graphene
- Spin diffusion/transport in -type GaAs quantum wells
- Spin diffusion in Si/SiGe quantum wells: spin relaxation in the absence of D'yakonov-Perel' relaxation mechanism
- Electron spin diffusion at the interface of multiferroic oxides