Electron spin diffusion in monolayer MoS${}_2$

Abstract

Electron spin diffusion is investigated in monolayer MoS${}_2$ in the absence of external electric and magnetic fields. The electron-impurity scattering, which is shown to play a negligible role in spin relaxation in time domain in this material, has a marked effect on the in-plane spin diffusion due to the anisotropic spin precession frequency in the spatial domain. With the electron-impurity and inter-valley electron-phonon scatterings separately included in the scattering term, we study the intra- and inter-valley diffusion processes of the in-plane spins by analytically solving the kinetic spin Bloch equations. The intra-valley process is found to be dominant in the in-plane spin diffusion, in contrast to the case of spin relaxation in time domain, where the inter-valley process can be comparable to or even more important than the intra-valley one. For the intra-valley process, we find that the in-plane spin diffusion is suppressed with the increase of impurity density but effectively enhanced by increasing electron density in both the degenerate and nondegenerate limits. We also take into account the electron-electron Coulomb scattering in the intra-valley process. Interestingly, we find that in the nondegenerate limit, the intra-valley spin diffusion length presents an opposite trend in the electron density dependence compared to the one with only electron-impurity scattering.

6 pages, 1 figure

References in corpus (36)

• Atomically thin MoS2: A new direct-gap semiconductor
• Two Dimensional Atomic Crystals
• Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides
• Control of valley polarization in monolayer MoS2 by optical helicity
• Valley polarization in MoS2 monolayers by optical pumping
• MoS_2 as an ideal material for valleytronics: valley-selective circular dichroism and valley Hall effect
• Electronic spin transport and spin precession in single graphene layers at room temperature
• First-principles study of the phonon-limited mobility in n-type single-layer MoS2
• Quasiparticle band structures and optical properties of strained monolayer MoS2 and WS2
• Low-temperature photocarrier dynamics in monolayer MoS2
• Spin dynamics in semiconductors
• Electronic properties of the MoS2-WS2 heterojunction
• Robust optical emission polarization in MoS2 monolayers through selective valley excitation
• Monolayer MoS2: trigonal warping, "Γ-valley", and spin-orbit coupling effects
• Tight-binding model and direct-gap/indirect-gap transition in single-layer and multi-layer MoS${}_2$
• Carrier and polarization dynamics in monolayer MoS2
• Spin Hall effect transistor
• Spin-orbit coupling, quantum dots, and qubits in monolayer transition metal dichalcogenides
• Effective lattice Hamiltonian for monolayer MoS2 : Tailoring electronic structure with perpendicular electric and magnetic fields
• Spin-Orbit mediated spin relaxation in monolayer MoS2
• Electric field screening in atomically thin layers of MoS2: the role of interlayer coupling
• Long-Distance Diffusion of Excitons in Double Quantum Well Structures
• Electron spin relaxation due to D'yakonov-Perel' and Elliot-Yafet mechanisms in monolayer MoS${}_2$: Role of intravalley and intervalley processes
• Kinetic theory of spin transport in n-typed semiconductor quantum wells
• Anisotropic spin transport in GaAs quantum wells in the presence of competing Dresselhaus and Rashba spin-orbit-coupling strengths
• Longitudinal spin decoherence in spin diffusion in semiconductors
• Electron spin relaxation in graphene from a microscopic approach: Role of electron-electron interaction
• Electron spin diffusion and transport in graphene
• Intrinsic electron spin relaxation due to the D'yakonov-Perel' mechanism in monolayer MoS${}_2$
• Spin-drift transport and its applications
• Spin diffusion/transport in $n$-type GaAs quantum wells
• Spin diffusion in Si/SiGe quantum wells: spin relaxation in the absence of D'yakonov-Perel' relaxation mechanism
• Electron spin relaxation in bilayer graphene
• Electron spin relaxation in rippled graphene with low mobilities
• Electron spin diffusion at the interface of multiferroic oxides
• Spin diffusion in $n$-type (111) GaAs quantum wells

Cited by in corpus (9)

• k.p theory for two-dimensional transition metal dichalcogenide semiconductors
• Intrinsic valley Hall transport in atomically thin MoS2
• Dielectrics for Two-Dimensional Transition Metal Dichalcogenide Applications
• Novel valley depolarization dynamics and valley Hall effect of exciton in mono- and bilayer MoS${}_2$
• Optical detection of long electron spin transport lengths in a monolayer semiconductor
• Spin relaxation in hole-doped transition metal dichalcogenide monolayer and bilayer with the crystal defects
• Theory optical excitation spectra and depolarization dynamics in bilayer WS${}_2$ from viewpoint of excimers
• Spin diffusion in p-type bilayer WSe${}_2$
• Spin diffusion in ultracold spin-orbit coupled ${}^{40}$K gas