Spin-drift transport and its applications

Abstract

We study the generation of non-equilibrium spin currents in systems with spatially-inhomogeneous magnetic potentials. For sufficiently high current densities, the spin polarization can be transported over distances significantly exceeding the intrinsic spin-diffusion length. This enables applications that are impossible within the conventional spin-diffusion regime. Specifically, we propose dc measurement schemes for the carrier spin relaxation times, $T_1$ and $T_2$, as well as demonstrate the possibility of spin species separation by driving current through a region with an inhomogeneous magnetic potential.

4 pages, 2 eps figures

References in corpus (3)

• Spin-polarized transport in inhomogeneous magnetic semiconductors: theory of magnetic/nonmagnetic p-n junctions
• Electron Spin Injection at a Schottky Contact
• Spin transport in inhomogeneous magnetic fields: a proposal for Stern-Gerlach-like experiments with conduction electrons

Cited by in corpus (12)

• Spintronics: Fundamentals and applications
• Spin dynamics in semiconductors
• Drift-Diffusion Approach to Spin-Polarized Transport
• Spin Transport in Two Dimensional Hopping Systems
• Modeling for Semiconductor Spintronics
• Spin diffusion/transport in $n$-type GaAs quantum wells
• Spin oscillations in transient diffusion of a spin pulse in n-type semiconductor quantum wells
• Electron spin diffusion in monolayer MoS${}_2$
• Spin diffusion in Si/SiGe quantum wells: spin relaxation in the absence of D'yakonov-Perel' relaxation mechanism
• Diffusion and transport of spin pulses in an $n$-type semiconductor quantum well
• Relaxation of Electron Spin during High-Field Transport in GaAs Bulk
• Voltage controlled spin precession in InAs quantum wells