Electron Spin Injection at a Schottky Contact
arXiv:cond-mat/0202131 · doi:10.1103/PhysRevB.66.113303
Abstract
We investigate theoretically electrical spin injection at a Schottky contact between a spin-polarized electrode and a non-magnetic semiconductor. Current and electron density spin-polarizations are discussed as functions of barrier energy and semiconductor doping density. The effect of a spin-dependent interface resistance that results from a tunneling region at the contact/semiconductor interface is described. The model can serve as a guide for designing spin-injection experiments with regard to the interface properties and device structure.
4 pages, 4 figures
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Cited by in corpus (20)
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