Voltage controlled spin precession in InAs quantum wells

Abstract

In this work we investigate spin diffusion in InAs quantum wells with the Rashba spin-orbit coupling modulated by a gate voltage. The gate voltage dependence of the spin diffusion under different temperatures is studied with all the scattering explicitly included. Our result partially supports the claim of the realization of the Datta-Das spin-injected field effect transistor by Koo {\it et al.} [Science {\bf 325}, 1515 (2009)]. We also show that the scattering plays an important role in spin diffusion in such a system.

4 pages, 2 figures

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Cited by in corpus (3)

• Electron spin diffusion and transport in graphene
• Interplay between resonant tunneling and spin precession oscillations in all-electric all-semiconductor spin transistors
• Microscopic theory for the Doppler velocimetry of spin propagation in semiconductor quantum wells