Voltage controlled spin precession in InAs quantum wells

Abstract

In this work we investigate spin diffusion in InAs quantum wells with the Rashba spin-orbit coupling modulated by a gate voltage. The gate voltage dependence of the spin diffusion under different temperatures is studied with all the scattering explicitly included. Our result partially supports the claim of the realization of the Datta-Das spin-injected field effect transistor by Koo {\it et al.} [Science {\bf 325}, 1515 (2009)]. We also show that the scattering plays an important role in spin diffusion in such a system.

4 pages, 2 figures

References in corpus (9)

• Coherent spin transport through a 350-micron-thick Silicon wafer
• Electron spin relaxation in bulk III-V semiconductors from a fully microscopic kinetic spin Bloch equation approach
• Hot-electron effect in spin dephasing in $n$-type GaAs quantum wells
• Spin relaxation in $n$-type GaAs quantum wells from a full microscopic approach
• Anisotropic spin transport in GaAs quantum wells in the presence of competing Dresselhaus and Rashba spin-orbit-coupling strengths
• Multichannel effects in Rashba quantum wires
• Spin diffusion/transport in $n$-type GaAs quantum wells
• Spin diffusion in Si/SiGe quantum wells: spin relaxation in the absence of D'yakonov-Perel' relaxation mechanism
• Diffusion and transport of spin pulses in an $n$-type semiconductor quantum well

Cited by in corpus (1)

• Electron spin diffusion and transport in graphene