Electron spin diffusion at the interface of multiferroic oxides

Abstract

We study the spin diffusion in a two-dimensional electron gas at the interface of oxide heterostructure LaAlO${}_3$/SrTiO${}_3$ grown on multiferroic TbMnO${}_3$ at 15 K by means of the kinetic spin Bloch equation approach. The spiral magnetic moments of Mn${}^{3+}$ in TbMnO${}_3$ interact with the diffusing spins at the LaAlO${}_3$/SrTiO${}_3$ interface via the Heisenberg exchange interaction. It is demonstrated that the spin diffusion length is always finite, despite the polarization direction of the injected spins. Our study also reveals the important role played by the Coulomb scattering, which can effectively suppress the spin diffusion.

6 pages, 4 figures

References in corpus (16)

• The electronic properties of graphene
• Direct electronic measurement of the spin Hall effect
• Electronic measurement and control of spin transport in Silicon
• An Exact SU(2) Symmetry and Persistent Spin Helix in a Spin-Orbit Coupled System
• Collinear-to-Spiral Spin Transformation without Changing Modulation Wavelength upon Ferroelectric Transition in Tb1-xDyxMnO3
• Spin Injection into a Graphene Thin Film at Room Temperature
• High temperature spin dephasing in n-typed GaAs quantum wells
• Effect of initial spin polarization on spin dephasing and electron g factor in a high-mobility two-dimensional electron system
• Hot-electron effect in spin dephasing in $n$-type GaAs quantum wells
• Detection of large magneto-anisotropy of electron spin dephasing in a high-mobility two-dimensional electron system in a $[001]$ GaAs/AlGaAs quantum well
• Anisotropic spin transport in GaAs quantum wells in the presence of competing Dresselhaus and Rashba spin-orbit-coupling strengths
• Electron spin relaxation in graphene from a microscopic approach: Role of electron-electron interaction
• Electron spin diffusion and transport in graphene
• Spin relaxation under identical Dresselhaus and Rashba coupling strengths in GaAs quantum wells
• Spin diffusion in Si/SiGe quantum wells: spin relaxation in the absence of D'yakonov-Perel' relaxation mechanism
• Multi-valley spin relaxation in the presence of high in-plane electric fields in $n$-type GaAs quantum wells