Spin relaxation in hole-doped transition metal dichalcogenide monolayer and bilayer with the crystal defects

Abstract

We study the electronic spin relaxation effect in the hole-doped monolayer and bilayer transition-metal dichalcogenides in the presence of the crystal defects. We consider realistic models of the lattice vacancy and actually estimate the spin relaxation rate using the multi-orbital tight-binding model. In the monolayer, the spin-relaxation time is found to be extremely long compared to the momentum relaxation time, and this is attributed to the fact that the spin hybridization in the band structure is suppressed by the mirror reflection symmetry. The bilayer TMD has a much shorter spin relaxation time in contrast, and this is attributed to stronger spin hybridization due to the absence of the mirror symmetry.

5 pages, 5 figures

References in corpus (9)

• Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
• Valley polarization in MoS2 monolayers by optical pumping
• Quasiparticle band structures and optical properties of strained monolayer MoS2 and WS2
• Generation and Electric Control of Spin-Coupled Valley Current in WSe2
• Long-lived nanosecond spin relaxation and spin coherence of electrons in monolayer MoS_2 and WS_2
• Intrinsic spin Hall effect in monolayers of group-VI dichalcogenides: A first-principles study
• Spin-valley relaxation and quantum transport regimes in two-dimensional transition metal dichalcogenides
• Spin-dependent Refraction at the Atomic Step of Transition-metal Dichalcogenides
• Electron spin diffusion in monolayer MoS${}_2$

Cited by in corpus (8)

• Unveiling valley lifetimes of free charge carriers in monolayer WSe${}_2$
• Giant proximity exchange and valley splitting in transition metal dichalcogenide/$h\mathrm{BN}$/(Co, Ni) heterostructures
• Emergent gauge fields from curvature in single layers of transition-metal dichalcogenides
• Spin diffusion in p-type bilayer WSe${}_2$
• Pseudo-spin triplet superconductivity in transition-metal dichalcogenide monolayers and Andreev reflection in the lateral heterostructures of 2$H$-NbSe${}_2$
• Electronic transmission in the lateral heterostructure of semiconducting and metallic transition-metal dichalcogenide monolayers
• Intrinsic spin-valley locking for conducting electrons in metal-semiconductor-metal lateral hetero-structures of $1H$-transition-metal dichalcogenides
• Three-orbital continuous model for $1H$-type metallic transition-metal dichalcogenide monolayers