Spin memory and spin-lattice relaxation in two-dimensional hexagonal crystals
arXiv:1308.0928 · doi:10.1103/PhysRevB.88.195417
Abstract
We propose a theory of spin relaxation of electrons and holes in two-dimensional hexagonal crystals such as atomic layers of transition metal dichalcogenides (MoS2, WSe2, etc). We show that even in intrinsically defectless crystals, their flexural deformations are able to generate spin relaxation of carriers. Based on symmetry analysis, we formulate a generic model for spin-lattice coupling between electrons and flexural deformations, and use it to determine temperature and material-dependent spin lifetimes in atomic crystals in ambient conditions.
4+1 pages
References in corpus (13)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- Van der Waals heterostructures
- Control of graphene's properties by reversible hydrogenation
- Valley polarization in MoS2 monolayers by optical pumping
- Intrinsic and Rashba Spin-orbit Interactions in Graphene Sheets
- Elastic properties of freely suspended MoS2 nanosheets
- Spin-orbit coupling in curved graphene, fullerenes, nanotubes, and nanotube caps
- Weak localisation magnetoresistance and valley symmetry in graphene
- Visibility of dichalcogenide nanolayers
- Intervalley scattering, long-range disorder, and effective time reversal symmetry breaking in graphene
- Intrinsic spin Hall effect in monolayers of group-VI dichalcogenides: A first-principles study
- Influence of trigonal warping on interference effects in bilayer graphene
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- Theory of strain in single-layer transition metal dichalcogenides
- Electronic Structure Theory of Strained Two-Dimensional Materials with Hexagonal Symmetry
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- Spin relaxation in hole-doped transition metal dichalcogenide monolayer and bilayer with the crystal defects
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- Electronic transmission in the lateral heterostructure of semiconducting and metallic transition-metal dichalcogenide monolayers
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- Strain-Fluctuation-Induced Near-Quantization of Valley Hall Conductivity in Graphene Systems
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