Spin to charge conversion in MoS monolayer with spin pumping
arXiv:1510.03451
Abstract
Layered transition-metal dichalcogenides (TMDs) family are gaining increasing importance due to their unique electronic band structures, promising interplay among light, valley (pseudospin), charge and spin degrees of freedom. They possess large intrinsic spin-orbit interaction which make them most relevant for the emerging field of spin-orbitronics. Here we report on the conversion of spin current to charge current in MoS2 monolayer. Using spin pumping from a ferromagnetic layer (10 nm of cobalt) we find that the spin to charge conversion is highly efficient. Analysis in the frame of the inverse Rashba-Edelstein (RE) effect yields a RE length in excess of 4 nm at room temperature. Furthermore, owing to the semiconducting nature of MoS, it is found that back-gating allows electrical field control of the spin-relaxation rate of the MoS-metallic stack.
References in corpus (6)
- Valley polarization in MoS2 monolayers by optical pumping
- The Valley Hall Effect in MoS2 Transistors
- Role of transparency of platinum-ferromagnet interface in determining intrinsic magnitude of spin Hall effect
- Spin-Orbit Proximity Effect in Graphene
- Intrinsic spin Hall effect in monolayers of group-VI dichalcogenides: A first-principles study
- Observation of spin-charge conversion in CVD-grown single-layer graphene
Cited by in corpus (7)
- Strong Rashba-Edelstein Effect-Induced Spin-Orbit Torques in Monolayer Transition-Metal Dichalcogenide/Ferromagnet Bilayers
- Quantum Materials for Spin and Charge Conversion
- Spintronic Sources of Ultrashort Terahertz Electromagnetic Pulses
- Spin-orbit torques in NbSe/Permalloy bilayers
- Berry curvature in monolayer MoS with broken mirror symmetry
- Separation of Artifacts from Spin-Torque Ferromagnetic Resonance Measurements of Spin-Orbit Torque for the Low-Symmetry van der Waals Semi-Metal ZrTe
- Benchmarking Inverse Rashba-Edelstein Magnetoelectric Devices for Neuromorphic Computing