Intrinsic spin-valley locking for conducting electrons in metal-semiconductor-metal lateral hetero-structures of -transition-metal dichalcogenides
arXiv:2203.01377 · doi:10.1103/PhysRevB.105.115401
Abstract
Lateral-hetero structures of atomic layered materials alter the electronic properties of pristine crystals and provide a possibility to produce useful monolayer materials. We reveal that metal-semiconductor-metal lateral-hetero junctions of -transition-metal dichalcogenides intrinsically possess conducting channels of electrons with spin-valley locking, e.g., gate electrode. We theoretically investigate the electronic structure and transport properties of the lateral-hetero junctions and show that the hetero-structure produces conducting channels through the and valleys in the semiconducting transition-metal dichalcogenide and restricts the spin of the conducting electrons in each valley due to the valley dependent charge transfer effect. Moreover, the theoretical investigation shows that the hetero-junction of WSe realizes a high transmission probability for valley-spin locked electrons even in a long semiconducting region. The hetero-junction also provides a useful electronic transport property, a step-like I-V characteristic.
arXiv comment10 pages, 11 figures
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