TiS3 transistors with tailored morphology and electrical properties

Abstract

Control over the morphology of TiS3 is demonstrated by synthesizing 1D nanoribbons and 2D nanosheets. The nanosheets can be exfoliated down to a single layer. Through extensive characterization of the two morphologies, differences in the electronic properties are found and attributed to a higher density of sulphur vacancies in nanosheets which, according to density functional theory calculations, leads to an n-type doping.

arXiv comment28 pages, 4 figures, 1 table. Includes Supporting Information (9 figures, 2 tables)

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Cited by in corpus (36)

• Band Alignment of 2D Semiconductors for Designing Heterostructures with Momentum Space Matching
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• High-Throughput Computational Screening of Two-Dimensional Semiconductors
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• Electronics and optoelectronics of quasi-one dimensional layered transition metal trichalcogenides
• One-Dimensional van der Waals Quantum Materials -- State of the Art and Perspectives
• Titanium trisulfide (TiS3): a 2D semiconductor with quasi-1D optical and electronic properties
• Naturally occurring van der Waals materials
• Topological currents in black phosphorus with broken inversion symmetry
• Temperature dependent Raman spectroscopy of titanium trisulfide (TiS3) nanoribbons and nanosheets
• Low-Frequency Electronic Noise in Exfoliated Quasi-1D TaSe3 van Der Waals Nanowires
• Polarization-sensitive and broadband photodetection based on a mixed-dimensionality TiS3/Si p-n junction
• Electronic bandgap and exciton binding energy of layered semiconductor TiS3
• High current density electrical breakdown of TiS3 nanoribbon-based field-effect transistors
• Vacancy Formation and Oxidation Characteristics of Single Layer TiS3
• NbS${}_3$: A unique quasi one-dimensional conductor with three charge density wave transitions
• Large birefringence and linear dichroism in TiS3 nanosheets
• Realizing intrinsic excitonic insulator by decoupling exciton binding energy from the minimum band gap
• Strongly anisotropic strain-tunability of excitons in exfoliated ZrSe${}_3$
• Anisotropic features in the electronic structure of the two-dimensional transition metal trichalcogenide TiS${}_3$: electron doping and plasmons
• Anisotropic effects in two-dimensional materials
• Dielectrophoretic assembly of liquid-phase-exfoliated TiS3 nanoribbons for photodetecting applications
• Anisotropic properties of monolayer 2D materials: an overview from the C2DB database
• Tunable Photodetectors via in situ Thermal Conversion of TiS${}_3$ to TiO${}_2$
• Thermal conductivity of the quasi-1D materials TaSe3 and ZrTe3
• Raman Fingerprint of Pressure-Induced Phase Transitions in TiS3 Nanoribbons: Implications for Thermal Measurements under Extreme Stress Conditions
• Excitonic complexes in anisotropic atomically thin two-dimensional materials: black phosphorus and TiS${}_3$
• Graphene-TiS${}_3$ heterojunction for selective polar vapor sensing at room temperature
• Quantum Transport Characteristics of Lateral pn-Junction of Single Layer TiS3
• Multi-terminal electronic transport in boron nitride encapsulated TiS${}_3$ nanosheets
• Transition from band insulator to excitonic insulator via alloying Se into Monolayer TiS${}_3$: A Computational Study
• On the bending of rectangular atomic monolayers along different directions: an ab initio study
• Strain control of the competition between metallic and semiconducting states in single-layers of TaSe${}_3$
• Interlayer excitonic insulator in two-dimensional double-layer semiconductor junctions: An explicitly solvable model
• Ultrahigh breakdown current density of van der Waals One Dimensional $\mathrm{PdB}{\mathrm{r}}_2$
• Screening Promising Thermoelectric Materials in Binary Chalcogenides through High-Throughput Computations